• Part: 2SK3579-01MR
  • Description: Power MOSFET
  • Category: MOSFET
  • Manufacturer: Fuji Electric
  • Size: 275.61 KB
Download 2SK3579-01MR Datasheet PDF
Fuji Electric
2SK3579-01MR
2SK3579-01MR is Power MOSFET manufactured by Fuji Electric.
Features High speed switching Low on-resistance No secondary breadown Low driving power Avalanche-proof Applications Switching regulators UPS (Uninterruptible Power Supply) DC-DC converters Maximum ratings and characteristic Absolute maximum ratings (Tc=25°C unless otherwise specified) Ratings Unit 150 V 130 V Continuous drain current ±23 A Pulsed drain current ±96 A Gate-source voltage ±20 V Repetitive or non-repetitive 23 A Maximum Avalanche Energy 242 m J Maximum Drain-Source d V/dt 20 k V/µs Peak Diode Recovery d V/dt 5 k V/µs Max. power dissipation 2.1 W 40 Operating and storage Tch +150 °C -55 to +150 temperature range Tstg °C Isolation Voltage VISO - 6 2 k Vrms < DSS, Tch=150°C < < =-ID, -di/dt=50A/µs, Vcc=BV - 3 IF< - 1 L=0.67m H, Vcc=48V - 2 Tch=150°C - 4 VDS< 250V - 5 V GS =-20V - 6 t=60sec f=60Hz = Item Drain-source voltage Symbol V DS VDSX - 5 ID ID(puls] VGS IAR - 2 EAS - 1 d VDS/dt - 4 d V/dt - 3 PD Ta=25°C Tc=25°C Equivalent circuit schematic Drain(D) Gate(G) Source(S) Electrical characteristics (Tc =25°C unless otherwise specified) Item Drain-source breakdown voltaget Gate threshold voltage Zero gate voltage drain current Gate-source leakage current Drain-source on-state resistance Symbol V(BR)DSS VGS(th) IDSS IGSS RDS(on) Test Conditions ID=250µA VGS=0V ID= 250µA VDS=VGS Tch=25°C VDS=150V VGS=0V Tch=125°C VDS=120V VGS=0V VGS=±20V VDS=0V ID=11.5A VGS=10V Min. 150 1.0 Typ. Max. 2.5 25 250 100 90 Units V V µA n A mΩ 10 65 Forward transcondutance Input capacitance Output capacitance Reverse transfer capacitance Turn-on time ton ww.. Turn-off time toff Total Gate Charge Gate-Source Charge Gate-Drain Charge Gate-Internal Resistance (Tep.Confficient) Avalanche capability Diode forward on-voltage Reverse recovery time Reverse recovery charge gfs Ciss Coss Crss td(on) tr td(off) tf QG QGS QGD Rg ∆Rg/∆Τch IAV V SD t rr Qrr ID=11.5A VDS =75V VGS=0V f=1MHz VDS=25V VCC=48V ID=11.5A VGS=10V RGS=10 Ω VCC =48V ID=23A VGS=10V 23.3 L=100µH Tch=25°C IF=23A VGS=0V...