2SK3889-01S Datasheet | Fuji Electric

Features a High speed at switching Low on-resistance D breakdown Low driving power No . secondary Avalanche-proof w w Applications w Switching regulators DC-DC converters UPS (Uninterruptible Power Supply) U FUJI POWER MOSFET 4 t .c Outline Drawings (mm) 200406 See to P4 Maximum ratings and characteristic Absolute maximum ratings (Tc=25°C unless otherwise specified) Item Drain-source voltage Continuous Drain Current Pulsed Drain Current Gate-Source Voltage Maximum Avalanche current Non-Repetitive Maximum Avalanche Energy Repetitive Maximum Avalanche Energy Maximum Drain-Source d V/dt Peak Diode Recovery d V/dt Max. Power Dissipation Operating and Storage Temperature range Symbol V DS VDSX ID ID(puls] VGS IAR EAS EAR d V DS /dt d V/dt PD Tch Tstg Ratings 600 600 9 ±36 ±30 9 462.3 16.5 20 5 165 1.67 +150 Unit V V A A V A m J m J Remarks VGS=-30V Equivalent circuit schematic Electrical characteristics (Tc =25°C unless otherwise specified) Item Drain-Source Breakdown Voltage Gate Threshold Voltage Zero Gate Voltage Drain Current Gate-Source Leakage Current Drain-Source On-State Resistance Forward Transconductance Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-On Time ton Turn-Off Time toff Total Gate Charge Gate-Source Charge Gate-Drain Charge Diode forward on-voltage Reverse recovery time Reverse recovery charge w w w t a .D Symbol BVDSS VGS(th) IDSS IGSS RDS(on) gfs Ciss Coss Crss td(on) tr td(off) tf QG QGS QGD V SD trr Qrr Symbol Rth(ch-c) Rth(ch-a) S a -55 to +150 k V/µs VDS= < 600V k V/µs Note - 4 Tc=25°C W Ta=25°C °C °C e h Note - 1 Note - 2 Note - 3 U 4 t e .c Gate(G) m o Drain(D) Source(S) Note - 1:Tch< = 150°C,Repetitive and Non-repetitive Note - 2:Starting Tch=25°C,IAS=3.6A,L=65.4m H, VCC=60V,RG=50Ω EAS limited by maximum channel temperature and Avalanche current. See to the ‘Avalanche Energy’ graph Note - 3:Repetitive rating:Pulse width limited by maximum channel temperature. See to the ‘Transient Thermal impedance’ graph. Note -...