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FLC167WF - C-Band Power GaAs FET

General Description

The FLC167WF is a power GaAs FET that is designed for general purpose applications in the C-Band frequency range as it provides superior power, gain, and efficiency.

Fujitsu’s stringent Quality Assurance Program assures the highest reliability and consistent performance.

Key Features

  • High Output Power: P1dB = 31.8dBm(Typ. ) High Gain: G1dB = 7.5dB(Typ. ) High PAE: ηadd = 35%(Typ. ) Proven Reliability Hermetic Metal/Ceramic Package.

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Datasheet Details

Part number FLC167WF
Manufacturer Fujitsu Component
File Size 112.45 KB
Description C-Band Power GaAs FET
Datasheet download datasheet FLC167WF Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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FLC167WF C-Band Power GaAs FET FEATURES • • • • • High Output Power: P1dB = 31.8dBm(Typ.) High Gain: G1dB = 7.5dB(Typ.) High PAE: ηadd = 35%(Typ.) Proven Reliability Hermetic Metal/Ceramic Package DESCRIPTION The FLC167WF is a power GaAs FET that is designed for general purpose applications in the C-Band frequency range as it provides superior power, gain, and efficiency. Fujitsu’s stringent Quality Assurance Program assures the highest reliability and consistent performance. ABSOLUTE MAXIMUM RATING (Ambient Temperature Ta=25°C) Item Drain-Source Voltage Gate-Source Voltage Total Power Dissipation Storage Temperature Channel Temperature Symbol VDS VGS PT Tstg Tch Tc = 25°C Condition Rating 15 -5 7.