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FLC167WF Datasheet C-band Power Gaas Fet

Manufacturer: Fujitsu Component

Overview: FLC167WF C-Band Power GaAs FET.

Datasheet Details

Part number FLC167WF
Manufacturer Fujitsu Component
File Size 112.45 KB
Description C-Band Power GaAs FET
Datasheet FLC167WF_FujitsuComponent.pdf

General Description

The FLC167WF is a power GaAs FET that is designed for general purpose applications in the C-Band frequency range as it provides superior power, gain, and efficiency.

Fujitsu’s stringent Quality Assurance Program assures the highest reliability and consistent performance.

ABSOLUTE MAXIMUM RATING (Ambient Temperature Ta=25°C) Item Drain-Source Voltage Gate-Source Voltage Total Power Dissipation Storage Temperature Channel Temperature Symbol VDS VGS PT Tstg Tch Tc = 25°C Condition Rating 15 -5 7.5 -65 to +175 175 Unit V V W °C °C Fujitsu remends the following conditions for the reliable operation of GaAs FETs: 1.

Key Features

  • High Output Power: P1dB = 31.8dBm(Typ. ) High Gain: G1dB = 7.5dB(Typ. ) High PAE: ηadd = 35%(Typ. ) Proven Reliability Hermetic Metal/Ceramic Package.

FLC167WF Distributor