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MB84VD2119xA - (MB84VD2118xA / MB84VD2119xA) 16M ( x 8/ x 16) FLASH MEMORY & 4M ( x 8/ x 16) STATIC RAM

Download the MB84VD2119xA datasheet PDF. This datasheet also covers the MB84VD2118xA variant, as both devices belong to the same (mb84vd2118xa / mb84vd2119xa) 16m ( x 8/ x 16) flash memory & 4m ( x 8/ x 16) static ram family and are provided as variant models within a single manufacturer datasheet.

General Description

) Host system can program or erase in one bank, then immediately and simultaneously read from the other bank Zero latency between read and write operations Read-while-erase Read-while-program Minimum 100,000 write/erase cycles Sector erase architecture Eight 4 K words and thirty

Key Features

  • Power supply voltage of 2.7 V to 3.6 V.
  • High performance 85 ns maximum access time.
  • Operating Temperature.
  • 25 °C to +85 °C.
  • Package 69-ball FBGA, 56-pin TSOP(I) (Continued) s.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (MB84VD2118xA_FujitsuMediaDevices.pdf) that lists specifications for multiple related part numbers.

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Other Datasheets by Fujitsu Semiconductor Limited

Part Number Description
MB84VD2118xA (MB84VD2118xA / MB84VD2119xA) 16M ( x 8/ x 16) FLASH MEMORY & 4M ( x 8/ x 16) STATIC RAM
MB84VD2108x (MB84VD2108x / MB84VD2109x) 16M (x8/x16) FLASH MEMORY & 2M (x8/x16) STATIC RAM
MB84VD2109x (MB84VD2108x / MB84VD2109x) 16M (x8/x16) FLASH MEMORY & 2M (x8/x16) STATIC RAM
MB84VD2002 (MB84VD2002 / MB84VD2003) 8M (x 8/x 16) FLASH MEMORY & 2M (x 8) STATIC RAM
MB84VD2003 (MB84VD2002 / MB84VD2003) 8M (x 8/x 16) FLASH MEMORY & 2M (x 8) STATIC RAM

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
( DataSheet : www.DataSheet4U.com ) FUJITSU SEMICONDUCTOR DATA SHEET DS05-50202-3E Stacked MCP (Multi-Chip Package) FLASH MEMORY & SRAM CMOS 16M ( × 8/ × 16) FLASH MEMORY & 4M ( × 8/ × 16) STATIC RAM MB84VD2118XA-85/MB84VD2119XA-85 s FEATURES • Power supply voltage of 2.7 V to 3.6 V • High performance 85 ns maximum access time • Operating Temperature −25 °C to +85 °C • Package 69-ball FBGA, 56-pin TSOP(I) (Continued) s PRODUCT LINE UP Flash Memory Ordering Part No. VCCf*, VCCs* = 3.0 V +0.6 V −0.3 V SRAM MB84VD2118XA-85/MB84VD2119XA-85 85 85 35 85 85 45 Max. Address Access Time (ns) Max. CE Access Time (ns) Max. OE Access Time (ns) *: Both VCCf and VCCs must be in recommended operation range when either part is being accessed.