MB84VD22290FA-70 Overview
.. FUJITSU SEMICONDUCTOR DATA SHEET DS05-50308-2E Stacked MCP (Multi-Chip Package) FLASH MEMORY & SRAM CMOS 32M (×16) FLASH MEMORY & 8M (×16) STATIC RAM MB84VD22280FA-70/MB84VD22290FA-70 MB84VD22280FE-70/MB84VD22290FE-70.
MB84VD22290FA-70 Key Features
- Power Supply Voltage of 2.7 V to 3.1 V
- High Performance 70 ns maximum access time (Flash) 70 ns maximum access time (SRAM)
- Operating Temperature -30°C to +85°C
- Package 59-ball FBGA
- FLASH MEMORY
- Simultaneous Read/Write Operations (Dual Bank)
- Minimum 100,000 Write/Erase Cycles
- Sector Erase Architecture Eight 4K word and sixty-three 32K word sectors in word mode Any bination of sectors can be con
- Boot Code Sector Architecture MB84VD22280: Top sector MB84VD22290: Bottom sector
- Embedded EraseTM-2 Algorithms Automatically pre-programs and erases the chip or any sector