Datasheet4U Logo Datasheet4U.com

MBM29DL163TE - (MBM29DL16xTE/BE) 16M (2MX8/1MX16) BIT Dual Operation

General Description

The MBM29DL16XTE/BE are a 16M-bit, 3.0 V-only Flash memory organized as 2M bytes of 8 bits each or 1M words of 16 bits each.

The MBM29DL16XTE/BE are offered in a 48-pin TSOP(I) and 48-ball FBGA Package.

These devices are designed to be programmed in-system with the standard system 3.0 V VCC supply.

Key Features

  • Dual Operation.
  • 0.23 µm Process Technology.
  • Simultaneous Read/Write operations (dual bank) Multiple devices available with different bank sizes (Refer to Table 1) Host system can program or erase in one bank, then immediately and simultaneously read from the other bank Zero latency between read and write operations Read-while-erase Read-while-program.
  • Single 3.0 V read, program, and erase Minimizes system level power requirements (Continued) s.

📥 Download Datasheet

📁 Similar Datasheet

Part Number Description Manufacturer
MBM29DL163TE-12 16M (2M x 8/1M x 16) BIT Dual Operation Fujitsu
MBM29DL163TE-70 16M (2M x 8/1M x 16) BIT Dual Operation Fujitsu
MBM29DL163TE-90 16M (2M x 8/1M x 16) BIT Dual Operation Fujitsu
MBM29DL163TD-70 FLASH MEMORY CMOS 16M (2M x 8/1M x 16) BIT Fujitsu
MBM29DL163BD-70 FLASH MEMORY CMOS 16M (2M x 8/1M x 16) BIT Fujitsu

Other Datasheets by Fujitsu Semiconductor Limited

Part Number Description
MBM29DL163TD (MBM29DL16xTD/BD) FLASH MEMORY CMOS 16M (2M X 8/1M X 16) BIT
MBM29DL163TD-90 16M (2M x 8/1M x 16) BIT Dual Operation
MBM29DL163BD (MBM29DL16xTD/BD) FLASH MEMORY CMOS 16M (2M X 8/1M X 16) BIT
MBM29DL163BE (MBM29DL16xTE/BE) 16M (2MX8/1MX16) BIT Dual Operation
MBM29DL163BE (MBM29DL16xTE/BE) 16M (2MX8/1MX16) BIT Dual Operation

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
www.DataSheet4U.com FUJITSU SEMICONDUCTOR DATA SHEET DS05-20880-1E FLASH MEMORY CMOS 16M (2M × 8/1M × 16) BIT MBM29DL16XTE/BE -70/90/12 s FEATURES Dual Operation • 0.23 µm Process Technology • Simultaneous Read/Write operations (dual bank) Multiple devices available with different bank sizes (Refer to Table 1) Host system can program or erase in one bank, then immediately and simultaneously read from the other bank Zero latency between read and write operations Read-while-erase Read-while-program • Single 3.0 V read, program, and erase Minimizes system level power requirements (Continued) s PRODUCT LINE UP Part No. VCC = 3.3 V Ordering Part No. VCC = 3.0 V Max. Address Access Time (ns) Max. CE Access Time (ns) Max. OE Access Time (ns) +0.3 V –0.3 V +0.6 V –0.