MBM29DL323TD
Key Features
- 0.33 µm Process Technology
- Simultaneous Read/Write operations (dual bank) Multiple devices available with different bank sizes (Refer to Table
- compatible with JEDEC-standard mands Uses same software mands as E2PROMs
- Minimum 100,000 program/erase cycles
- High performance 80 ns maximum access time
- Boot Code Sector Architecture T = Top sector B = Bottom sector
- Embedded EraseTM Algorithms Automatically pre-programs and erases the chip or any sector
- Embedded ProgramTM Algorithms Automatically writes and verifies data at specified address
- Data Polling and Toggle Bit feature for detection of program or erase cycle pletion
- Ready/Busy output (RY/BY) Hardware method for detection of program or erase cycle pletion
