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MBM29F800BA - 8M (1M x 8/512K x 16) BIT FLASH MEMORY

Download the MBM29F800BA datasheet PDF. This datasheet also covers the MBM29F800TA variant, as both devices belong to the same 8m (1m x 8/512k x 16) bit flash memory family and are provided as variant models within a single manufacturer datasheet.

General Description

The MBM29F800TA/BA is a 8M-bit, 5.0 V-only Flash memory organized as 1M bytes of 8 bits each or 512K words of 16 bits each.

The MBM29F800TA/BA is offered in a 48-pin TSOP(I) and 44-pin SOP packages.

This device is designed to be programmed in-system with the standard system 5.0 V VCC supply.

Key Features

  • Single 5.0 V read, write, and erase Minimizes system level power requirements.
  • Compatible with JEDEC-standard commands Uses same software commands as E2PROMs.
  • Compatible with JEDEC-standard world-wide pinouts 48-pin TSOP(I) (Package suffix: PFTN.
  • Normal Bend Type, PFTR.
  • Reversed Bend Type) 44-pin SOP (Package suffix: PF).
  • Minimum 100,000 write/erase cycles.
  • High performance 55 ns maximum access time.
  • Sector erase architectu.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (MBM29F800TA_FujitsuMediaDevices.pdf) that lists specifications for multiple related part numbers.

📁 Similar Datasheet

Part Number Description Manufacturer
MBM29F800BA-55 8M (1M x 8/512K x 16) BIT FLASH MEMORY Fujitsu
MBM29F800BA-70 8M (1M x 8/512K x 16) BIT FLASH MEMORY Fujitsu
MBM29F800BA-90 8M (1M x 8/512K x 16) BIT FLASH MEMORY Fujitsu
MBM29F800TA-55 8M (1M x 8/512K x 16) BIT FLASH MEMORY Fujitsu
MBM29F800TA-70 8M (1M x 8/512K x 16) BIT FLASH MEMORY Fujitsu

Other Datasheets by Fujitsu Semiconductor Limited

Part Number Description
MBM29F800TA 8M (1M X 8/512K X 16) BIT
MBM29F002BC 2M (256K X 8) BIT
MBM29F002TC 2M (256K x 8) BIT FLASH MEMORY
MBM29F004BC FLASH MEMORY CMOS 4M (512K x 8) BIT
MBM29F004TC (MBM29F004BC/TC) FLASH MEMORY CMOS 4 M (512 K X 8) BIT

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
FUJITSU SEMICONDUCTOR DATA SHEET DS05-20841-4E FLASH MEMORY CMOS 8M (1M × 8/512K × 16) BIT MBM29F800TA-55/-70/-90/MBM29F800BA-55/-70/-90 s FEATURES • Single 5.0 V read, write, and erase Minimizes system level power requirements • Compatible with JEDEC-standard commands Uses same software commands as E2PROMs • Compatible with JEDEC-standard world-wide pinouts 48-pin TSOP(I) (Package suffix: PFTN – Normal Bend Type, PFTR – Reversed Bend Type) 44-pin SOP (Package suffix: PF) • Minimum 100,000 write/erase cycles • High performance 55 ns maximum access time • Sector erase architecture One 16K byte, two 8K bytes, one 32K byte, and fifteen 64K bytes. Any combination of sectors can be concurrently erased. Also supports full chip erase.