• Part: MBM29F800BA
  • Description: 8M (1M x 8/512K x 16) BIT FLASH MEMORY
  • Manufacturer: Fujitsu Semiconductor Limited
  • Size: 543.61 KB
MBM29F800BA Datasheet (PDF) Download
Fujitsu Semiconductor Limited
MBM29F800BA

Key Features

  • Single 5.0 V read, write, and erase Minimizes system level power requirements
  • Compatible with JEDEC-standard commands Uses same software commands as E2PROMs
  • Compatible with JEDEC-standard world-wide pinouts 48-pin TSOP(I) (Package suffix: PFTN - Normal Bend Type, PFTR - Reversed Bend Type) 44-pin SOP (Package suffix: PF)
  • Minimum 100,000 write/erase cycles
  • High performance 55 ns maximum access time
  • Sector erase architecture One 16K byte, two 8K bytes, one 32K byte, and fifteen 64K bytes. Any combination of sectors can be concurrently erased. Also supports full chip erase.
  • Boot Code Sector Architecture T = Top sector B = Bottom sector
  • Embedded EraseTM Algorithms Automatically pre-programs and erases the chip or any sector
  • Embedded ProgramTM Algorithms Automatically writes and verifies data at specified address
  • Data Polling and Toggle Bit feature for detection of program or erase cycle completion