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MBM29LV160TM - (MBM29LV160BM/TM) FLASH MEMORY CMOS 16 M (2M X 8/1M X 16) BIT MirrorFlashTM

This page provides the datasheet information for the MBM29LV160TM, a member of the MBM29LV160BM (MBM29LV160BM/TM) FLASH MEMORY CMOS 16 M (2M X 8/1M X 16) BIT MirrorFlashTM family.

Datasheet Summary

Description

The MBM29LV160TM/BM is a 32M-bit, 3.0 V-only Flash memory organized as 4M bytes by 8 bits or 2M words by 16 bits.

The MBM29LV160TM/BM is offered in 48-pin TSOP(1) and 48-ball FBGA.

The device is designed to be programmed in-system with the standard 3.0 V VCC supply.

Features

  • a sector erase architecture. The sector mode allows each sector to be erased and reprogrammed without affecting other sectors. All sectors are erased when shipped from the factory. The device features single 3.0 V power supply operation for both read and write functions. Internally generated and regulated voltages are provided for the program and erase operations. A low VCC detector automatically inhibits write operations on the loss of power. The end of program or erase is detected by Data Poll.

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Datasheet Details

Part number MBM29LV160TM
Manufacturer Fujitsu Media Devices
File Size 550.01 KB
Description (MBM29LV160BM/TM) FLASH MEMORY CMOS 16 M (2M X 8/1M X 16) BIT MirrorFlashTM
Datasheet download datasheet MBM29LV160TM Datasheet
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www.DataSheet4U.com FUJITSU SEMICONDUCTOR DATA SHEET DS05-20906-3E FLASH MEMORY CMOS 16 M (2M × 8/1M × 16) BIT MirrorFlashTM* MBM29LV160TM/BM 90 s DESCRIPTION The MBM29LV160TM/BM is a 32M-bit, 3.0 V-only Flash memory organized as 4M bytes by 8 bits or 2M words by 16 bits. The MBM29LV160TM/BM is offered in 48-pin TSOP(1) and 48-ball FBGA. The device is designed to be programmed in-system with the standard 3.0 V VCC supply. 12.0 V VPP and 5.0 V VCC are not required for program or erase operations. The devices can also be reprogrammed in standard EPROM programmers. The standard MBM29LV160TM/BM offers access times of 90 ns, allowing operation of high-speed microprocessors without wait states.
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