MBM29LV160TM Datasheet Text
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FUJITSU SEMICONDUCTOR DATA SHEET
DS05-20906-3E
FLASH MEMORY
CMOS
16 M (2M × 8/1M × 16) BIT
MirrorFlashTM-
MBM29LV160TM/BM 90 s DESCRIPTION
The MBM29LV160TM/BM is a 32M-bit, 3.0 V-only Flash memory organized as 4M bytes by 8 bits or 2M words by 16 bits. The MBM29LV160TM/BM is offered in 48-pin TSOP(1) and 48-ball FBGA. The device is designed to be programmed in-system with the standard 3.0 V VCC supply. 12.0 V VPP and 5.0 V VCC are not required for program or erase operations. The devices can also be reprogrammed in standard EPROM programmers. The standard MBM29LV160TM/BM offers access times of 90 ns, allowing operation of high-speed microprocessors without wait states. To eliminate bus contention the devices have separate chip enable (CE), write enable (WE), and output enable (OE) controls. (Continued) MBM29LV160TM/BM 90 3.0 V to 3.6 V 90 ns 90 ns 25 ns s PRODUCT LINE UP
Part No. VCC Max Address Access Time Max CE Access Time Max OE Access Time s PACKAGES
48-pin plastic TSOP (1)
Marking Side
48-ball plastic FBGA
(FPT-48P-M19)
(BGA-48P-M20)
- : MirrorFlashTM is a trademark of Fujitsu Limited. Notes :
- Programming in byte mode ( × 8) is prohibited.
- Programming to the address that already contains data is prohibited (It is mandatory to erase data prior to overprogram on the same address) .
MBM29LV160TM/BM90
(Continued)
The MBM29LV160TM/BM supports mand set patible with JEDEC single-power-supply EEPROMS standard. mands are written into the mand register. The register contents serve as input to an internal statemachine which controls the erase and programming circuitry. Write cycles also internally latch addresses and data needed for the programming and erase operations. Reading data out of the devices is similar to reading...
