MBM29PL12LM Datasheet PDF - Fujitsu Media Devices FLASH MEMORY 128 M (16M x 8/8M x 16) BIT Specs

MBM29PL12LM - FLASH MEMORY 128 M (16M x 8/8M x 16) BIT

Datasheet Summary

Description

The MBM29PL12LM is a 128M-bit, 3.0 V-only Flash memory organized as 16M bytes by 8 bits or 8M words by 16 bits.

The MBM29PL12LM is offered in 58-pin TSOP (1) and 80-ball FBGA.

The device is designed to be programmed in-system with the standard 3.0 V VCC supply.

Features

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0.23 µm Process Technology.
Single 3.0 V read, program and erase Minimizes system level power requirements.
Industry-standard pinouts 56-pin TSOP (1) 80-ball FBGA (Package suffix: PBT).
Minimum 100,000 program/erase cycles.
High performance Page mode Fast 8 bytes / 4 words access capabililty.
Sector erase architecture 256 × 64K byte and 32K word sectors Any combination of sectors can be concurrently erased. Also supports full chip erase.

Datasheet Details

Part number	MBM29PL12LM
Manufacturer	Fujitsu Media Devices
File Size	1.01 MB
Description	FLASH MEMORY 128 M (16M x 8/8M x 16) BIT
Datasheet	MBM29PL12LM Datasheet
Additional preview pages of the MBM29PL12LM datasheet.

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Full PDF Text Transcription

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FUJITSU SEMICONDUCTOR DATA SHEET DS05-20914-2E FLASH MEMORY CMOS 128 M (16M × 8/8M × 16) BIT MirrorFlashTM* MBM29PL12LM 10 ■ DESCRIPTION The MBM29PL12LM is a 128M-bit, 3.0 V-only Flash memory organized as 16M bytes by 8 bits or 8M words by 16 bits. The MBM29PL12LM is offered in 58-pin TSOP (1) and 80-ball FBGA. The device is designed to be programmed in-system with the standard 3.0 V VCC supply. 12.0 V VPP and 5.0 V VCC are not required for write or erase operations. The devices can also be reprogrammed in standard EPROM programmers. (Continued) MBM29PL12LM 10 3.0 V to 3.6 V 100 ns 100 ns 30 ns ■ PRODUCT LINE UP Part No. VCC Max Address Access Time Max CE Access Time Max Page Read Access Time Notes : • Programming in byte mode ( × 8) is prohibited.

Published: Oct 2, 2005 |