MBM29PL12LM Datasheet Text
FUJITSU SEMICONDUCTOR DATA SHEET
DS05-20914-2E
FLASH MEMORY
CMOS
128 M (16M × 8/8M × 16) BIT
MirrorFlashTM-
MBM29PL12LM 10
- DESCRIPTION
The MBM29PL12LM is a 128M-bit, 3.0 V-only Flash memory organized as 16M bytes by 8 bits or 8M words by 16 bits. The MBM29PL12LM is offered in 58-pin TSOP (1) and 80-ball FBGA. The device is designed to be programmed in-system with the standard 3.0 V VCC supply. 12.0 V VPP and 5.0 V VCC are not required for write or erase operations. The devices can also be reprogrammed in standard EPROM programmers. (Continued) MBM29PL12LM 10 3.0 V to 3.6 V 100 ns 100 ns 30 ns
- PRODUCT LINE UP
Part No. VCC Max Address Access Time Max CE Access Time Max Page Read Access Time
Notes :
- Programming in byte mode ( × 8) is prohibited.
- Programming to the address that already contains data is prohibited. (It is mandatory to erase data prior to overprogram on the same address.)
- PACKAGES
56-pin plastic TSOP (1) 80-ball plastic FBGA
(FPT-56P-M01)
(BGA-80P-M02)
- : MirrorFlashTM is a trademark of Fujitsu Limited.
MBM29PL12LM10
(Continued) The standard MBM29PL12LM offers access times of 90 ns, allowing operation of high-speed microprocessors without wait states. To eliminate bus contention the devices have separate chip enable (CE), write enable (WE), and output enable (OE) controls. The MBM29PL12LM supports mand set patible with JEDEC single-power-supply EEPROMS standard. mands are written into the mand register. The register contents serve as input to an internal statemachine which controls the erase and programming circuitry. Write cycles also internally latch addresses and data needed for the programming and erase operations. Reading data out of the devices is similar to reading from 5.0 V and 12.0 V Flash or EPROM devices. The...