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MBM29PL12LM - FLASH MEMORY 128 M (16M x 8/8M x 16) BIT

General Description

The MBM29PL12LM is a 128M-bit, 3.0 V-only Flash memory organized as 16M bytes by 8 bits or 8M words by 16 bits.

The MBM29PL12LM is offered in 58-pin TSOP (1) and 80-ball FBGA.

The device is designed to be programmed in-system with the standard 3.0 V VCC supply.

Key Features

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  • 0.23 µm Process Technology.
  • Single 3.0 V read, program and erase Minimizes system level power requirements.
  • Industry-standard pinouts 56-pin TSOP (1) 80-ball FBGA (Package suffix: PBT).
  • Minimum 100,000 program/erase cycles.
  • High performance Page mode Fast 8 bytes / 4 words access capabililty.
  • Sector erase architecture 256 × 64K byte and 32K word sectors Any combination of sectors can be concurrently erased. Also supports full chip erase.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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FUJITSU SEMICONDUCTOR DATA SHEET DS05-20914-2E FLASH MEMORY CMOS 128 M (16M × 8/8M × 16) BIT MirrorFlashTM* MBM29PL12LM 10 ■ DESCRIPTION The MBM29PL12LM is a 128M-bit, 3.0 V-only Flash memory organized as 16M bytes by 8 bits or 8M words by 16 bits. The MBM29PL12LM is offered in 58-pin TSOP (1) and 80-ball FBGA. The device is designed to be programmed in-system with the standard 3.0 V VCC supply. 12.0 V VPP and 5.0 V VCC are not required for write or erase operations. The devices can also be reprogrammed in standard EPROM programmers. (Continued) MBM29PL12LM 10 3.0 V to 3.6 V 100 ns 100 ns 30 ns ■ PRODUCT LINE UP Part No. VCC Max Address Access Time Max CE Access Time Max Page Read Access Time Notes : • Programming in byte mode ( × 8) is prohibited.