MBM29PL65LM Datasheet PDF - Fujitsu Media Devices FLASH MEMORY 64M (4M x 16) BIT Specs

MBM29PL65LM - FLASH MEMORY 64M (4M x 16) BIT

Datasheet Summary

Description

MBM29PL65LM is of 67,108,864 bit capacity +3.0 V -only Flash memory enabling word write, both across- the chip, comprehensive erase and by-the-unit, individual sector erase.

Features

MirrorFlash MemoryTM.
1 0.23 µm Process Technology 4 M × 16 bit configuration Single 3.0 V read, program and erase Standard 48-pin TSOP (1) (Package suffix : TN) Minimum 100,000 program/erase cycles High performance Page mode (4 words) Sector erase architecture (Sectors can be grouped in any given combination. ) 32K word sectors Any combination of sectors can be concurrently erased. Also supports full chip erase. H.

Datasheet Details

Part number	MBM29PL65LM
Manufacturer	Fujitsu Media Devices
File Size	642.80 KB
Description	FLASH MEMORY 64M (4M x 16) BIT
Datasheet	MBM29PL65LM Datasheet
Additional preview pages of the MBM29PL65LM datasheet.

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Full PDF Text Transcription

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www.DataSheet4U.com FUJITSU SEMICONDUCTOR DATA SHEET DS05-20903-1E FLASH MEMORY CMOS 64 M (4M × 16) BIT MirrorFlashTM MBM29PL65LM-90/10 s DESCRIPTION MBM29PL65LM is of 67,108,864 bit capacity +3.0 V -only Flash memory enabling word write, both across- the chip, comprehensive erase and by-the-unit, individual sector erase. Its CMOS peripheral circuitry contributes to significant saving in power consumption even at high-speed standby mode operation. MBM29PL65LM consists of 4M x 16 bit Word mode and erases 128 sectors at ever 32K word. Its package type is 48-pin TSOP . Embedded Program AlgorithmTM, when executed with erase or program command sequences, automatically times the program pulse widths and verifies proper cell margin.

Published: Jul 30, 2007 |