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MBM29PL65LM - FLASH MEMORY 64M (4M x 16) BIT

General Description

MBM29PL65LM is of 67,108,864 bit capacity +3.0 V -only Flash memory enabling word write, both across- the chip, comprehensive erase and by-the-unit, individual sector erase.

Key Features

  • MirrorFlash MemoryTM.
  • 1 0.23 µm Process Technology 4 M × 16 bit configuration Single 3.0 V read, program and erase Standard 48-pin TSOP (1) (Package suffix : TN) Minimum 100,000 program/erase cycles High performance Page mode (4 words) Sector erase architecture (Sectors can be grouped in any given combination. ) 32K word sectors Any combination of sectors can be concurrently erased. Also supports full chip erase. H.

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Full PDF Text Transcription (Reference)

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www.DataSheet4U.com FUJITSU SEMICONDUCTOR DATA SHEET DS05-20903-1E FLASH MEMORY CMOS 64 M (4M × 16) BIT MirrorFlashTM MBM29PL65LM-90/10 s DESCRIPTION MBM29PL65LM is of 67,108,864 bit capacity +3.0 V -only Flash memory enabling word write, both across- the chip, comprehensive erase and by-the-unit, individual sector erase. Its CMOS peripheral circuitry contributes to significant saving in power consumption even at high-speed standby mode operation. MBM29PL65LM consists of 4M x 16 bit Word mode and erases 128 sectors at ever 32K word. Its package type is 48-pin TSOP . Embedded Program AlgorithmTM, when executed with erase or program command sequences, automatically times the program pulse widths and verifies proper cell margin.