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MBM29SL800TE - (MBM29SL800TE/BE) FLASH MEMORY CMOS 8 M (1 M X 8/512 K X 16) BIT

General Description

The MBM29SL800TE/BE are a 8 M-bit, 1.8 V-only Flash memory organized as 1 Mbytes of 8 bits each or 512 Kwords of 16 bits each.

The MBM29SL800TE/BE are offered in a 48-ball FBGA and 45-ball SCSP packages.

These devices are designed to be programmed in-system with the standard system 1.8 V VCC supply.

Key Features

  • 0.23 µm Process Technology.
  • Single 1.8 V read, program, and erase Minimizes system level power requirements.
  • Compatible with JEDEC-standard world-wide pinouts 48-ball FBGA (Package suffix : PBT) 45-ball SCSP (Package suffix : PW).
  • Minimum 100,000 program/erase cycles.
  • High performance 90 ns maximum access time.
  • Sector erase architecture One 8 Kword, two 4 Kwords, one 16 Kword, and fifteen 32 Kwords sectors in word mode One 16 Kbyte, two 8 Kb.

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Other Datasheets by Fujitsu Semiconductor Limited

Part Number Description
MBM29SL800TD (MBM29SL800TD/BD) FLASH MEMORY CMOS 8 M (1 M X 8/512 K X 16) BIT
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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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www.DataSheet4U.com FUJITSU SEMICONDUCTOR DATA SHEET DS05-20911-1E FLASH MEMORY CMOS 8 M (1 M × 8/512 K × 16) BIT MBM29SL800TE/BE-90/10 s DESCRIPTION The MBM29SL800TE/BE are a 8 M-bit, 1.8 V-only Flash memory organized as 1 Mbytes of 8 bits each or 512 Kwords of 16 bits each. The MBM29SL800TE/BE are offered in a 48-ball FBGA and 45-ball SCSP packages. These devices are designed to be programmed in-system with the standard system 1.8 V VCC supply. 12.0 V VPP and 5.0 V VCC are not required for write or erase operations. The devices can also be reprogrammed in standard EPROM programmers. (Continued) s PRODUCT LINE UP Part No. VCC Max Address Access Time Max CE Access Time Max OE Access Time 90 ns 90 ns 30 ns MBM29SL800TE/BE-90 MBM29SL800TE/BE-10 100 ns 100 ns 35 ns 1.65 V to 1.