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MBM30LV0032 - 32M (4M X 8) BIT NAND-type

General Description

The MBM30LV0032 device is a single 3.3 V 4M × 8 bit NAND flash memory organized as 528 byte × 16 pages × 512 blocks.

Each 528 byte page contains 16 bytes of optionally selected spare area which may be used to store ECC code(Specifications indicated are on condition that ECC system would be combined.

Key Features

  • 3.3 V-only operating voltage (2.7 V to 3.6 V) Minimizes system level power requirements.
  • Organization Memory Cell Array : (4M + 128K) ×8 bit Data Register : (512 + 16) ×8 bit.
  • Automatic Program and Erase Page Program : (512 + 16) Byte Block Erase : (8K + 256) Byte.
  • 528 Byte Page Read Operation Random Access : 7 µs (Max. ) Serial Access : 35 ns (Max. ).
  • Fast Program and Erase Program Time : 200 µs (Typ. ) / page Block Erase Time : 2 ms (Typ. ) / block.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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FUJITSU SEMICONDUCTOR DATA SHEET DS05-20884-2E FLASH MEMORY CMOS 32M (4M × 8) BIT NAND-type MBM30LV0032 s DESCRIPTION The MBM30LV0032 device is a single 3.3 V 4M × 8 bit NAND flash memory organized as 528 byte × 16 pages × 512 blocks. Each 528 byte page contains 16 bytes of optionally selected spare area which may be used to store ECC code(Specifications indicated are on condition that ECC system would be combined.). Program and read data is transferred between the memory array and page register in 528 byte increments. A 528 byte page can be programmed in 200 µs and an 8K byte block can be erased in 2 ms under typical conditions. An internal controller automates all program and erase operations including the verification of data margins.