MBM30LV0064 Overview
The MBM30LV0064 device is a single 3.3 V 8M × 8 bit NAND flash memory organized as 528 byte × 16 pages × 1024 blocks. Each 528 byte page contains 16 bytes of optionally selected spare area which may be used to store ECC code(Specifications indecated are on condition that ECC system would be bined.). Program and read data is transferred between the memory array and page register in 528 byte increments.
MBM30LV0064 Key Features
- 3.3 V-only operating voltage (2.7 V to 3.6 V) Minimizes system level power requirements
- Organization Memory Cell Array : (8M + 256K) ×8 bit Data Register : (512 + 16) ×8 bit
- Automatic Program and Erase Page Program : (512 + 16) Byte Block Erase : (8K + 256) Byte
- 528 Byte Page Read Operation Random Access : 7 µs (Max.) Serial Access : 35 ns (Max.)
- Fast Program and Erase Program Time : 200 µs (Typ.) / page Block Erase Time : 2 ms (Typ.) / block
- mand/Address/Data Multiplexed I/O Port
- Hardware Data Protection
- 1,000,000 write/erase cycle guaranteed (ECC system required)
- mand Register Operation
- Package 44(40)-pin TSOP Type II (0.8 mm pitch) Normal/Reverse Type
MBM30LV0064 Applications
- 3.3 V-only operating voltage (2.7 V to 3.6 V) Minimizes system level power requirements