Part MBM30LV0128
Description 128 M (16 M X 8) BIT NAND-type
Manufacturer Fujitsu Semiconductor Limited
Size 384.19 KB
Fujitsu Semiconductor Limited

MBM30LV0128 Overview

Key Features

  • 3.3 V-only operating voltage (2.7 V to 3.6 V) Minimizes system level power requirements
  • Organization Memory Cell Array : (16 M + 512 K) × 8 bit Data Register : (512 +
  • Automatic Program and Erase Page Program : (512 +
  • 528 Byte Page Read Operation Random Access : 10 µs (Max.) Serial Access : 35 ns (Max.)
  • Fast Program and Erase Program Time : 200 µs (Typ.) / page Block Erase Time : 2 ms (Typ.) / block
  • Command/Address/Data Multiplexed I/O Port
  • Hardware Data Protection
  • 1,000,000 write/erase cycles guaranteed (E