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29LV650 - 64M (4M x 16) BIT

General Description

The MBM29LV650UE/651UE is a 64M-bit, 3.0 V-only Flash memory organized as 4M words of 16 bits each.

The device is designed to be programmed in system with the standard system 3.0 V VCC supply.

12.0 V VPP and 5.0 V VCC are not required for write or erase operations.

Key Features

  • a sector erase architecture. The sector mode allows each sector to be erased and reprogrammed without affecting other sectors. The MBM29LV650UE/651UE is erased when shipped from the factory. Internally generated and regulated voltages are provided for the program and erase operations. A low VCC detector automatically inhibits write operations on the loss of power. The end of program or erase is detected by Data Polling of DQ7, by the Toggle Bit feature on DQ6. Once the end of a program or erase.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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FUJITSU SEMICONDUCTOR DATA SHEET DS05-20882-2E FLASH MEMORY CMOS 64M (4M × 16) BIT MBM29LV650UE/651UE -90/12 s DESCRIPTION The MBM29LV650UE/651UE is a 64M-bit, 3.0 V-only Flash memory organized as 4M words of 16 bits each. The device is designed to be programmed in system with the standard system 3.0 V VCC supply. 12.0 V VPP and 5.0 V VCC are not required for write or erase operations. The devices can also be reprogrammed in standard EPROM programmers. To eliminate bus contention the devices have separate chip enable (CE), write enable (WE), and output enable (OE) controls. The MBM29LV650UE/651UE is entirely command set compatible with JEDEC single-power-supply Flash standard. Commands are written to the command register using standard microprocessor write timings.