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29LV650 Datasheet 64m (4m X 16) Bit

Manufacturer: Fujitsu Semiconductor Limited

Overview: FUJITSU SEMICONDUCTOR DATA SHEET DS05-20882-2E FLASH MEMORY CMOS 64M (4M × 16) BIT MBM29LV650UE/651UE.

General Description

The MBM29LV650UE/651UE is a 64M-bit, 3.0 V-only Flash memory organized as 4M words of 16 bits each.

The device is designed to be programmed in system with the standard system 3.0 V VCC supply.

12.0 V VPP and 5.0 V VCC are not required for write or erase operations.

Key Features

  • a sector erase architecture. The sector mode allows each sector to be erased and reprogrammed without affecting other sectors. The MBM29LV650UE/651UE is erased when shipped from the factory. Internally generated and regulated voltages are provided for the program and erase operations. A low VCC detector automatically inhibits write operations on the loss of power. The end of program or erase is detected by Data Polling of DQ7, by the Toggle Bit feature on DQ6. Once the end of a program or erase.

More Datasheets from Fujitsu Semiconductor Limited

Part Number Description
29LV800TA MBM29LV800TA

29LV650 Distributor