Fujitsu FHX13X
The FHX13X, FHX14X are Super High Electron Mobility Transistor (SuperHEMTTM) intended for general purpose, ultra-low noise and high gain amplifiers in the 2-18GHz frequency range. The devices are well suited for telecommunication, DBS, TVRO, VSAT or other low noise applications. The drain-source operating voltage (VDS) should not exceed 2 volts.| Part No. | FHX13X |
|---|---|
| Datasheet | FHX13X Download |
| Manufacturer |  Fujitsu |
| Description | GaAs FET & HEMT Chips |
| Buy | Stock & Price |
FEATURES
● Low Noise Figure: 0.45dB (Typ.)@f=12GHz (FHX13)● High Associated Gain: 13.0dB (Typ.)@f=12GHz
● Lg ≤ 0.15µm, Wg = 200µm
● Gold Gate Metallization for High Reliability
DESCRIPTION
Fujitsu’s stringent Quality Assurance Program assures the highest reliability and consistent performance. ABSOLUTE MAXIMUM RATING (Ambient Temperature Ta=25°C) Item Symbol Drain-Source Voltage Gate-Source Voltage Total Power Dissipation Storage Temperature Channel Temperature VDS VGS Pt* Tstg Tch *Note: Mounted on Al2O3 board (30 x 30 x 0.65mm) Fujitsu recommends the following conditions for the reliable operation of GaAs FETs: 1. 2. The forward and reverse gate currents should not exceed 0.2 and -0.05mA respectively with gate resistance of 4000Ω. 3. The operating channel temperature (Tch) should not exceed 80°C. Rating 3.5 -3.0 180 -65 to +175 175ELECTRICAL CHARACTERISTICS
(Ambient Temperature Ta=25°C) Item Symbol Test Conditions Min. Saturated Drain Current IDSS VDS = 2V, VGS = 0V 10 Transconduct...
