FHX13X Datasheet | Fujitsu Semiconductor Limited

FEATURES - Low Noise Figure: 0.45d B (Typ.)@f=12GHz (FHX13) - High Associated Gain: 13.0d B (Typ.)@f=12GHz - Lg ≤ 0.15µm, Wg = 200µm - Gold Gate Metallization for High Reliability DESCRIPTION The FHX13X, FHX14X are Super High Electron Mobility Transistor (Super HEMTTM) intended for general purpose, ultra-low noise and high gain amplifiers in the 2-18GHz frequency range. The devices are well suited for telemunication, DBS, TVRO, VSAT or other low noise applications. Fujitsu’s stringent Quality Assurance Program assures the highest reliability and consistent performance. ABSOLUTE MAXIMUM RATING (Ambient Temperature Ta=25°C) Item Symbol Drain-Source Voltage Gate-Source Voltage Total Power Dissipation Storage Temperature Channel Temperature VDS VGS Pt- Tstg Tch - Note: Mounted on Al2O3 board (30 x 30 x 0.65mm) Fujitsu remends the following conditions for the reliable operation of Ga As FETs: 1. The drain-source operating voltage (VDS) should not exceed 2 volts. 2. The forward and reverse gate currents should not exceed 0.2 and -0.05m A respectively with gate resistance of 4000Ω. 3. The operating channel temperature (Tch) should not exceed 80°C. Rating 3.5 -3.0 180 -65 to +175 175 ELECTRICAL CHARACTERISTICS (Ambient Temperature Ta=25°C) Item Symbol Test Conditions Min. Saturated Drain Current IDSS VDS = 2V, VGS = 0V Transconductance gm VDS = 2V, IDS = 10m A Pinch-off Voltage Vp VDS = 2V, IDS = 1m A -0.1 Gate Source Breakdown Voltage VGSO IGS = -10µA -3.0 Noise Figure - FHX13X Associated Gain Gas VDS =...