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FLC057WG - C-Band Power GaAs FET

General Description

The FLC057WG is a power GaAs FET that is designed for general purpose applications in the C-Band frequency range as it provides superior power, gain, and efficiency.

Fujitsu’s stringent Quality Assurance Program assures the highest reliability and consistent performance.

Key Features

  • High Output Power: P1dB = 27.0dBm(Typ. ).
  • High Gain: G1dB = 9.0dB(Typ. ).
  • High PAE: ηadd = 38%(Typ. ).
  • Proven Reliability.
  • Hermetic Metal/Ceramic Package C-Band Power GaAs FET.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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FLC057WG FEATURES • High Output Power: P1dB = 27.0dBm(Typ.) • High Gain: G1dB = 9.0dB(Typ.) • High PAE: ηadd = 38%(Typ.) • Proven Reliability • Hermetic Metal/Ceramic Package C-Band Power GaAs FET DESCRIPTION The FLC057WG is a power GaAs FET that is designed for general purpose applications in the C-Band frequency range as it provides superior power, gain, and efficiency. Fujitsu’s stringent Quality Assurance Program assures the highest reliability and consistent performance. ABSOLUTE MAXIMUM RATING (Ambient Temperature Ta=25°C) Item Symbol Condition Drain-Source Voltage Gate-Source Voltage VDS VGS Total Power Dissipation PT Tc = 25°C Storage Temperature Channel Temperature Tstg Tch Fujitsu recommends the following conditions for the reliable operation of GaAs FETs: 1.