Fujitsu FLC167WF
The FLC167WF is a power GaAs FET that is designed for general purpose applications in the C-Band frequency range as it provides superior power, gain, and efficiency. The drain-source operating voltage (VDS) should not exceed 10 volts. The forward and reverse gate currents should not exceed 9.6 and -1.0 mA respectively with gate resistance of 200Ω.| Part No. | FLC167WF |
|---|---|
| Datasheet | FLC167WF Download |
| Manufacturer |  Fujitsu |
| Description | C-Band Power GaAs FET |
| Buy | Stock & Price |
FEATURES
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● High Output Power: P1dB = 31.8dBm(Typ.) High Gain: G1dB = 7.5dB(Typ.) High PAE: ηadd = 35%(Typ.) Proven Reliability Hermetic Metal/Ceramic Package
DESCRIPTION
Fujitsu’s stringent Quality Assurance Program assures the highest reliability and consistent performance. ABSOLUTE MAXIMUM RATING (Ambient Temperature Ta=25°C) Item Drain-Source Voltage Gate-Source Voltage Total Power Dissipation Storage Temperature Channel Temperature Symbol VDS VGS PT Tstg Tch Tc = 25°C Condition Rating 15 -5 7.5 -65 to +175 175 Unit V V W °C °C Fujitsu recommends the following conditions for the reliable operation of GaAs FETs: 1. 2. 3. The operating channel temperature (Tch) should not exceed 145°C.ELECTRICAL CHARACTERISTICS
(Ambient Temperature Ta=25°C) Item Saturated Drain Current Transconductance Pinch-off Voltage Gate Source Breakdown Voltage Output Power at 1dB G.C.P. Symbol IDSS gm Vp VGSO P1dB G1dB ηadd Rth Channel to Case VDS = 10V, IDS = 0.6 IDSS (Typ.), f = 6 GHz Test Conditions VDS = 5V, VGS = 0V VDS = 5V, IDS = 400mA VDS = 5V, IDS = 30mA IGS = -30µA Min. -1.0 -5 30.5 6.5 Limit Typ.
