Datasheet4U Logo Datasheet4U.com

FLL410IK-4C - L-Band High Power GaAs FET

General Description

The FLL410IK-4C is a partially matched 40 Watt GaAs FET that is designed for use in 3.4

3.7 GHz band amplifiers.

This new product is uniquely suited for use in WLL applications as it offers excellent linearity, high efficiency, high gain, long term reliability and ease of use.

Key Features

  • High Output Power: Pout=46.0dBm(Typ. ) High Gain: GL=11.5dB(Typ. ) High PAE: ηadd=44%(Typ. ) Broad Band: 3.4~3.7GHz Hermetically Sealed Package.

📥 Download Datasheet

📁 Similar Datasheet

Part Number Description Manufacturer
FLL410IK-3C L-Band High Power GaAs FET Eudyna Devices
FLL400IK-2 High Voltage - High Power GaAs FET Eudyna Devices
FLL400IK-2C High Voltage - High Power GaAs FET Eudyna Devices
FLL400IP-2 L-Band Medium & High Power GaAs FET Eudyna Devices
FLL400IP-3 L-Band Medium & High Power GaAs FET Eudyna Devices

Other Datasheets by Fujitsu Semiconductor Limited

Part Number Description
FLL107ME L-BAND MEDIUM & HIGH POWER GAAS FET
FLL177ME L-BAND MEDIUM & HIGH POWER GAAS FET

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
L-Band High Power GaAs FET FEATURES High Output Power: Pout=46.0dBm(Typ.) High Gain: GL=11.5dB(Typ.) High PAE: ηadd=44%(Typ.) Broad Band: 3.4~3.7GHz Hermetically Sealed Package DESCRIPTION The FLL410IK-4C is a partially matched 40 Watt GaAs FET that is designed for use in 3.4 – 3.7 GHz band amplifiers. This new product is uniquely suited for use in WLL applications as it offers excellent linearity, high efficiency, high gain, long term reliability and ease of use. Fujitsu’s stringent Quality Assurance Program assures the highest reliability and consistent performance. FLL410IK-4C www.DataSheet4U.