FLL410IK-4C Overview
L-Band High Power GaAs FET FEATURES ・High Output Power: Pout=46.0dBm(Typ.) ・High Gain: GL=11.5dB(Typ.) ・High PAE: ηadd=44%(Typ.) ・Broad Band: 3.4~3.7GHz ・Hermetically Sealed Package The FLL410IK-4C is a partially matched 40 Watt GaAs FET that is designed for use in 3.4 – 3.7 GHz band amplifiers. This new product is uniquely suited for use in WLL applications as it offers excellent linearity, high efficiency, high gain, long term reliability and...
FLL410IK-4C Key Features
- 3.7 GHz band amplifiers. This new product is uniquely suited for use in WLL