Fujitsu FLU17XM
The FLU17XM is a GaAs FET designed for base station applications in the PCN/PCS frequency range. This is a new product series that uses a surface mount package that has been optimized for high volume cost driven applications. The drain - source operating voltage (VDS) should not exceed 10 volts.| Part No. | FLU17XM |
|---|---|
| Datasheet | FLU17XM Download |
| Manufacturer |  Fujitsu |
| Description | L-Band Medium & High Power GaAs FET |
| Buy | Stock & Price |
FEATURES
● High Output Power: P1dB=32.5dBm (Typ.)● High Gain: G1dB=13.5dB (Typ.)
● High PAE: ηadd=46% (Typ.)
● Hermetic Metal/Ceramic (SMT) Package
● Tape and Reel Available FLU17XM L-Band Medium & High Power GaAs FET
DESCRIPTION
Fujitsu’s stringent Quality Assurance Program assures the highest reliability and consistent performance.ABSOLUTE MAXIMUM RATINGS
(Ambient Temperature Ta=25°C) Item Symbol Condition Rating Unit Drain-Source Voltage VDS Gate-Source Voltage VGS Total Power Dissipation PT Tc = 25°C Storage Temperature Tstg Channel Temperature Tch Fujitsu recommends the following conditions for the reliable operation of GaAs FETs: 1. 2. The forward and reverse gate currents should not exceed 9.6 and -1.0 mA respectively with gate resistance of 200Ω. 3. The operating channel temperature (Tch) should not exceed 145°C. 15 -5 7.5 -65 to +175 +175 V V W °C °CELECTRICAL CHARACTERISTICS
(Ambient Temperature Ta=25°C) Item Symbol Conditions Limits Min. Typ. Max. Unit Drain Current Trans...
