MB8117-10 Datasheet | Fujitsu Semiconductor Limited

DESCRIPTION The Fujitsu MB8117 is a fully decoded, dynamic NMOS random access memory organized as 16,384 one-bit words. The design is optimized for highspeed, high performance applications such as mainframe memory, buffer memory peripheral storage and environments where low power dissipation and pact layout are required. Multiplexed row and column address inputs permit the MB8117 to be housed in a standard 16-pin DIP. Pin outs conform to the JEDEC approved pin out. The MB8117 Is fabricated using silicon-gate NMOS and FUjitsu's advanced Double-Layer Polysilicon process. This process, coupled with single-transistor memory storage cells, permits maximum circuit density and minimal chip size. Dynamic circuitry is employed In the design, including the sense amplifiers. Clock timing requirements are non-critical, and power supply tolerance Is very wide. All inputs are TIL patible; the output is three-state TIL. FEATURES - 16,384 x 1 RAM, 16 pin package e Silicon-gate, Double Poly NMOS...