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MB8118-10 - NMOS DYNAMIC RANDOM ACCESS MEMORY

General Description

The Fujitsu MB8118 is a fully decoded dynamic NMOS random access memory organized as 16,384 one-bit words.

Key Features

  • 16,384 x 1 RAM, 16 pin package.
  • Silicon-gate, Double Poly NMOS, single transistor cell.
  • Address access time: 100 ns max (MB8118-10) 120 ns max (MB8118-12).
  • Cycle time: 235 ns min (MB8118-10) 270 ns min (MB8118-12).
  • Low power: 182mW max (MB8118-10) 160mW max (MB8118-12) 16.5mW max (Standby).
  • +5V single power supply, ±10% tolerance.
  • On chip substrate bias generator The MB8118 is fabricated using silicon-gate NMOS and Fujitsu's advanc.

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Other Datasheets by Fujitsu Semiconductor Limited

Part Number Description
MB8118-12 NMOS DYNAMIC RANDOM ACCESS MEMORY
MB811643242A SDRAM
MB811643242A-100 SDRAM
MB811643242A-125 SDRAM
MB811643242A-67 SDRAM

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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FUJITSU MICROELECTRONICS NMOS 16,384-BIT DYNAMIC RANDOM ACCESS MEMORY MB8118-10 MB8118-12 DESCRIPTION The Fujitsu MB8118 is a fully decoded dynamic NMOS random access memory organized as 16,384 one-bit words. The design is optimized for high-speed, high performance applications such as mainframe memory, buffer memory peripheral storage and environments where low power dissipation and compact layout are required. Multiplexed row and column address inputs permit the MB8118 to be housed in a standard 16-pin DIP. Pin outs conform to the JEDEC approved pin out.