MB8118-10 Datasheet | Fujitsu Semiconductor Limited

DESCRIPTION The Fujitsu MB8118 is a fully decoded dynamic NMOS random access memory organized as 16,384 one-bit words. The design is optimized for high-speed, high performance applications such as mainframe memory, buffer memory peripheral storage and environments where low power dissipation and pact layout are required. Multiplexed row and column address inputs permit the MB8118 to be housed in a standard 16-pin DIP. Pin outs conform to the JEDEC approved pin out. FEATURES - 16,384 x 1 RAM, 16 pin package - Silicon-gate, Double Poly NMOS, single transistor cell - Address access time: 100 ns max (MB8118-10) 120 ns max (MB8118-12) - Cycle time: 235 ns min (MB8118-10) 270 ns min (MB8118-12) - Low power: 182m W max (MB8118-10) 160m W max (MB8118-12) 16.5m W max (Standby) - +5V single power supply, ±10% tolerance - On chip substrate bias generator The MB8118 is fabricated using silicon-gate NMOS and Fujitsu's advanced Double-layer Polysilicon process. This process, coupled with...