MB8118-10 - NMOS DYNAMIC RANDOM ACCESS MEMORY

Product Overview

Fujitsu

Part number	MB8118-10
Manufacturer	Fujitsu
File Size	388.19 KB
Description	NMOS DYNAMIC RANDOM ACCESS MEMORY
Datasheet	MB8118-10 Datasheet
Additional preview pages of the MB8118-10 datasheet.

The Fujitsu MB8118 is a fully decoded dynamic NMOS random access memory organized as 16,384 one-bit words.

16,384 x 1 RAM, 16 pin package.
Silicon-gate, Double Poly NMOS, single transistor cell.
Address access time: 100 ns max (MB8118-10) 120 ns max (MB8118-12).
Cycle time: 235 ns min (MB8118-10) 270 ns min (MB8118-12).
Low power: 182mW max (MB8118-10) 160mW max (MB8118-12) 16.5mW max (Standby).
+5V single power supply, ±10% tolerance.
On chip substrate bias generator The MB8118 is fabricated using silicon-gate NMOS and Fujitsu's advanc.

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Published: Nov 15, 2025 |