MB8118-12 Overview
The Fujitsu MB8118 is a fully decoded dynamic NMOS random access memory organized as 16,384 one-bit words. The design is optimized for high-speed, high performance applications such as mainframe memory, buffer memory peripheral storage and environments where low power dissipation and pact layout are required. Multiplexed row and column address inputs permit the MB8118 to be housed in a standard 16-pin DIP.
MB8118-12 Key Features
- 16,384 x 1 RAM, 16 pin package
- Silicon-gate, Double Poly
- Address access time
- Cycle time: 235 ns min (MB8118-10) 270 ns min (MB8118-12)
- Low power: 182mW max (MB8118-10) 160mW max (MB8118-12) 16.5mW max (Standby)
- +5V single power supply, ±10% tolerance
- On chip substrate bias generator
- All inputs TTL patible, low capacitive load
- Three-state TTL patible output
- Hidden refresh capability