MB8168-70 Datasheet PDF (NMOS STATIC RANDOM ACCESS MEMORY)

MB8168-70 - NMOS STATIC RANDOM ACCESS MEMORY

This page provides the datasheet information for the MB8168-70, a member of the MB8168-55 NMOS STATIC RANDOM ACCESS MEMORY family.

Description

The Fujitsu MB8168 is a 4096 word by 4-bit static random access memory fabricated using N-channel silicon gate MOS technology.

The memory is fully static and requires no clock or timing strobe.

All pins are TTL compatible and a single 5V power supply is required.

Features

Organized as 4096 x 4.
Fully Static Operation, no clocks or timing strobe required.
Fast Access Time: MB8166-55 55 ns Max. MB8166-70 70 ns Max.
Low Power Consumption: IcC = 150mA Max. (Active) ISB = 40mA Max. (Standby).
Single +5V DC Supply Voltage, ±10% tolerance.
Common data Input and output.
Three-state output with OR-tie capability.
Chip select for simplified memory expansion, automatic power-down.
Standard 2.

Datasheet Details

Part number	MB8168-70
Manufacturer	Fujitsu
File Size	94.27 KB
Description	NMOS STATIC RANDOM ACCESS MEMORY
Datasheet	MB8168-70 Datasheet
Additional preview pages of the MB8168-70 datasheet.

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Full PDF Text Transcription

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FUJITSU MICROELECTRONICS NMOS 16,384·BIT STATIC RANDOM ACCESS MEMORY MBSl68·55 MBSl68·70 DESCRIPTION The Fujitsu MB8168 is a 4096 word by 4-bit static random access memory fabricated using N-channel silicon gate MOS technology. The memory is fully static and requires no clock or timing strobe. All pins are TTL compatible and a single 5V power supply is required. A separate chip select (CS) pin simplifies multi package system design. It permits the selection of an individual package when outputs are OR-tied. Furthermore, when selecting a single package by CS, the other deselected packages automatically power down. All Fujitsu devices offer the advantages of low power dissipation, low cost and high performance.

Published: Nov 16, 2025 |