Fujitsu MB81C68A
MB81C68A is a 4,096 words x 4 bits static random access memory fabricated w~h a CMOS silicon gate process. The memory uses asynchronous circu~ry. The MB81 C68A offers low power dissipation, low cost, and high performance.ABSOLUTE MAXIMUM RATINGS
(See Note) Rating Symbol Value UnH Supply Voltage Vcc -{).5 to +7.0 V Input Voltaae on any pin w~h respect to NO VIN --3.5 to +7.0 V Output Voltage on any 110 pin with respect to GND VOUT -{).5 to +7.0 V Output Current Power Dissipation loUT ±20 rnA Po 1.0 W Temperature Under Bias TBIAS -10 to +85●C I Storage Temperature Ceramic Range I Plastic TSTG ~5to+l50 -45 to +125 °C Note: Permanent deVICe damage may occur If absolute maximum ratings are exceeded. Functional operation should be restricted to !he conditions as detailed in the operation sections of this data sheet. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. eq,y,lghi © 19110 by FUJITSU LIMITED IIId Fujl10u MIcrooIeoI"",Ica.Inc. PLASTIC PACKAGE (DlP.20P●M01 ) PLASTIC PACKAGE (ZIP.20P●M01 ) LCC: See page 12 PIN ASSIGNMENT A, Vee A. A. A. Ao A. A,o Aa Al1 Ao liD, A, 1/0:. Ao 1/03 CS liD, GND WE This dev1D8 contains circullry to protect the Inputs against damage due to high static voltages or eledrlc fieldl.