Fujitsu MB81C69A
MB81C69A is a 4,096 words x 4 bits static random access memory fabricated w~h a CMOS silicon gate process. The memory uses asynchronous circu~ry. The MB81 C69A offers low power dissipation, low cost, and high performance.| Part No. | MB81C69A |
|---|---|
| Datasheet | MB81C69A Download |
| Manufacturer |  Fujitsu |
| Description | CMOS 16K-BIT HIGH-SPEED SRAM |
| Buy | Stock & Price |
ABSOLUTE MAXIMUM RATINGS
(See Note) Rating Supply Voltage Input Volta&e on any pin with respect to NO Output Vokage on any 110 pin w~h respect to GND Symbol Vcc VIN VOU! Value -0.5 to +7.0 -3.5 to +7.0 -0.5 to +7.0 Un" V V V Output Current Power Dissipation loUT ±20 mA Po 1.0 W Temperature Under Bias TSIAS -10to+85●C I Storage Temperature Ceramic Range I Plastic TSTG -65 to +150
●C -45 to +125 Note: Pennanent deVICe damage may occur If absolute maximum ratings are exceeded. Functional operation should be restricted to the conditions as delailed in the operation sections of this dala sheet. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. A, Vee A. A. As A, A. AlO A, A" A, 1/0, A, 1/0, Ao 1/0, CS 110. GND WE LCC: See page 11 This deYk:e contains circuitry to protect the inputs against damage due to high slatic vo~ages or electric fields. However. It Is advised that normal precautions be takan to avoid application of any vottage higher than maximum rated voltages to this high ifl1l8dance circuit.
