MB81C69A Datasheet | Fujitsu Semiconductor Limited

April 1990 Edition 3.0 DATA SHEET FUJITSU MB81 C69A-251-301-35 CMOS 16K-BIT HIGH-SPEED SRAM 4K Words x 4 Bits Static Random Access Memory with Super High-Speed The Fuj~su MB81C69A is a 4,096 words x 4 bits static random access memory fabricated w~h a CMOS silicon gate process. The memory uses asynchronous circu~ry. All pins are TIL patible and a single +5 V power supply is required. A separate chip select (CS) pin simpl~ies mukipackage systems design by perm~ing the selection of an individual package when outputs are OR-tied. The MB81 C69A offers low power dissipation, low cost, and high performance. - Organization: 4,096 words x 4 b~s - Static operation: no clocks or timing strobe required - Access time: t AA- 25 ns max, t ACS -15 ns max. (MB81C69A-25) t AA - 30 ns max, t ACS = 18 ns max. (MB81 C69A-30) t AA - 35 ns max, t ACS _ 20 ns max. (MB81 C69A-35) - Low power consumption: 385 m W max. (Active) - Single +5 V power supply ±1 0% tolerance - TIL patible inputs and outputs - Three-state outputs w~h OR-tie capacity - Chip select for simplified memory expansion - Electrostatic protection for all inputs and outputs - Standard 20-pin Plastic Package: DIP MB81 C69A-xx P - Standard 20-pad Ceramic Package: LCC MB81C69A-xx TV - Standard 20-pin Ceramic Package: CERDIP MB81C69A-xx Z CERAMIC PACKAGE CERDIP (DIP-20C-C03) PLASTIC PACKAGE (DIP-20P-M01 ) Lee: See page 11 PIN ASSIGNMENT .. Absolute Maximum Ratings (See Note) Rating Supply Voltage Input Volta&e on any pin with respect to NO Output Vokage on any 110 pin w~h respect to GND Symbol Vcc VIN VOU! Value -0.5 to +7.0 -3.5 to +7.0 -0.5 to +7.0 Un" V Output Current Power Dissipation lo UT ±20 m...