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MB81EDS516445 - 512M-Bit FCRAM

General Description

The Fujitsu MB81EDS516445 is a CMOS Fast Cycle Random Access Memory (FCRAM

) with Low Power Double Data Rate (LPDDR) SDRAM Interface containing 536,870,912 storages accessible in a 64-bit format.

Key Features

  • S.
  • 2 M word × 64 bit × 4 banks organization.
  • DDR Burst Read/Write Access Capability -tCK = 4.6 ns Min / 216 MHz Max (Tj ≤ + 105 °C) -tCK = 5 ns Min / 200 MHz Max (Tj ≤ + 125 °C).
  • Low Voltage Power Supply: VDD = VDDQ + 1.7 V to + 1.9 V.
  • Junction Temperature: TJ =.
  • 10 °C to + 125 °C.
  • 1.8 V-CMOS compatible inputs.
  • Burst Length: 2, 4, 8, 16.
  • CAS latency: 2, 3, 4.
  • Clock Stop capability during idle periods.
  • Auto.

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Other Datasheets by Fujitsu Semiconductor Limited

Part Number Description
MB81EDS516545 512M-Bit FCRAM
MB81EDS256445 256M-Bit FCRAM
MB811643242A SDRAM
MB811643242A-100 SDRAM
MB811643242A-125 SDRAM

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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FUJITSU MICROELECTRONICS DATA SHEET DS05-11464-1E MEMORY Consumer FCRAMTM CMOS 512M Bit (4 bank x 2M word x 64 bit) Consumer Applications Specific Memory for SiP MB81EDS516445 ■ DESCRIPTION The Fujitsu MB81EDS516445 is a CMOS Fast Cycle Random Access Memory (FCRAM*) with Low Power Double Data Rate (LPDDR) SDRAM Interface containing 536,870,912 storages accessible in a 64-bit format. MB81EDS516445 is suited for consumer application requiring high data band width with low power consumption. * : FCRAM is a trademark of Fujitsu Microelectronics Limited, Japan ■ FEATURES • 2 M word × 64 bit × 4 banks organization • DDR Burst Read/Write Access Capability -tCK = 4.6 ns Min / 216 MHz Max (Tj ≤ + 105 °C) -tCK = 5 ns Min / 200 MHz Max (Tj ≤ + 125 °C) • Low Voltage Power Supply: VDD = VDDQ + 1.