Fujitsu MB81EDS516445
MB81EDS516445 is a CMOS Fast Cycle Random Access Memory (FCRAM*) with Low Power Double Data Rate (LPDDR) SDRAM Interface containing 536,870,912 storages accessible in a 64-bit format. MB81EDS516445 is suited for consumer application requiring high data band width with low power consumption.| Part No. | MB81EDS516445 |
|---|---|
| Datasheet | MB81EDS516445 Download |
| Manufacturer |  Fujitsu |
| Description | 512M-Bit FCRAM |
| Buy | Stock & Price |
APPLICATIONS
Specific Memory for SiP MB81EDS516445●
DESCRIPTION
The Fujitsu * : FCRAM is a trademark of Fujitsu Microelectronics Limited, Japan●
FEATURES
● 2 M word × 64 bit × 4 banks organization● DDR Burst Read/Write Access Capability -tCK = 4.6 ns Min / 216 MHz Max (Tj ≤ + 105 °C) -tCK = 5 ns Min / 200 MHz Max (Tj ≤ + 125 °C)
● Low Voltage Power Supply: VDD = VDDQ + 1.7 V to + 1.9 V
● Junction Temperature: TJ = − 10 °C to + 125 °C
● 1.8 V-CMOS compatible inputs
● Burst Length: 2, 4, 8, 16
● CAS latency: 2, 3, 4
● Clock Stop capability during idle periods
● Auto Precharge option for each burst access
● Configurable Driver Strength and Pre Driver Strength
● Auto Refresh and Self Refresh Modes
● Deep Power Down Mode
● Low Power Consumption -IDD4R =300 mA Max @ 3.46 GByte/s -IDD4W =380 mA Max @ 3.46 GByte/s
● 8 K refresh cycles / 4 ms (Tj ≤ +125 °C) Copyright©2010 FUJITSU MICROELECTRONICS LIMITED All rights reserved 2010.2 MB81EDS516445
● PIN DESCRIPTIONS Symbol CK, CK CKE CS RAS CAS...
