MB81EDS516545
Description
The Fujitsu MB81EDS516545 is a CMOS Fast Cycle Random Access Memory (FCRAM*) with Low Power Double Data Rate (LPDDR) SDRAM Interface containing 536, 870, 912 storages accessible in a 64-bit format. MB81EDS516545 is suited for consumer application requiring high data band width with low power consumption. * : FCRAM is a trademark of Fujitsu Microelectronics Limited, Japan.
Key Features
- 2 M word × 64 bit × 4 banks organization
- DDR Burst Read/Write Access Capability -tCK = 4.6 ns Min / 216 MHz Max (Tj ≤ + 105 °C) -tCK = 5 ns Min / 200 MHz Max (Tj ≤ + 125 °C)
- Low Voltage Power Supply: VDD = VDDQ + 1.7 V to + 1.9 V
- Junction Temperature: TJ = - 10 °C to + 125 °C
- 1.8 V-CMOS compatible inputs
- Unidirectional READ Data Strobe per 2 byte
- Unidirectional WRITE Data Strobe per 2 byte
- Burst Length: 2, 4, 8, 16
- CAS latency: 2, 3, 4
- Clock Stop capability during idle periods
