Fujitsu MB8298
MB8298 is a high-speed static random access memory organized as 32,768 words x 8 bits and fabricated with CMOS technology. The MB8298 has low power dissipation, low cost, and high performance, and it is ideally suited for use in microprocessor systems and other applications where fast access time and ease of use are required. To obtain a smaller chip size, the cells use NMOS transistors and resistors.The MB8298 is housed in 300 mil plastic DIP and SOJ packages and a 45Q-mil SOP package.| Part No. | MB8298 |
|---|---|
| Datasheet | MB8298 Download |
| Manufacturer |  Fujitsu |
| Description | CMOS 256K-BIT HIGH-SPEED SRAM |
| Buy | Stock & Price |
ABSOLUTE MAXIMUM RATINGS
(See Note) Rating Symbol Value Unit Supply Voltage Vee -(l.5 to +7 V Input Voltaae on any pin with respect to NO V.. -3.5 to +7 V Output Volt~e on any I/O pin with respect to G 0 Voor -(l.5 to +7 V Output Current Power Dissipation Temperature Under Bias loor ±20 mA Po 1.0 W TBIAS -10 to +85 °C Storage Temperature Range TSTG -45 to +125 °C Note: Permanent device demage may oc:c:ur Wabsolule maximum ratings are exceeded. Funclional operation should be restricted to the oonditions as detailed in the operation sections of this data sheet Exposure to absolule maximum rating oonditions for exlended periods may atlect dellice reHability. Plastic Package (DIP-28P●M04) Plastic Package (LCC●28P-M04) Plaatlc Package (FPT●28P●M02) Pin Assignment (TOP VIEW) A14 Vee A12 ~ A7 A13 As As As As AA A1f A3 OE" A2 AID AI C§" AD IIOa 1101 1107 1102 I/Oa 1103 1/05 GND 1104 ThIB device contains clrwltry to proI8Ct the InpLCs against dwnage due to ligh ststle voltag.. or electric fields.
