Fujitsu MB82DP02183D
MB82DP02183D is a CMOS Fast Cycle Random Access Memory (FCRAM*) with asynchronous Static Random Access Memory (SRAM) interface containing 33,554,432 storages accessible in a 16-bit format. MB82DP02183D is utilized using a Fujitsu advanced FCRAM core technology and improved integration in comparison to regular SRAM. This MB82DP02183D is suited for mobile applications such as Cellular Handset and PDA.| Part No. | MB82DP02183D |
|---|---|
| Datasheet | MB82DP02183D Download |
| Manufacturer |  Fujitsu |
| Description | 32M Bit (2 M word X 16 bit) Mobile Phone Application Specific Memory |
| Buy | Stock & Price |
DESCRIPTION
The Fujitsu *: FCRAM is a trademark of Fujitsu Limited, Japan●
FEATURES
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● Asynchronous SRAM Interface Fast Access Cycle Time : 8 words Page Access Capability : Low Voltage Operating Condition : Wide Operating Temperature : tAA = tCE = 65 ns Max tPAA = 20 ns Max VDD = + 2.6 V to + 3.5 V TA = − 30 °C to + 85 °C TJ = − 30 °C to + 90 °C
● Byte Control by LB and UB
● Low Power Consumption
● Various Power Down mode
● Shipping Form : IDDA1 = 30 mA Max IDDS1 = 100 µA Max : Sleep 4M-bit Partial 8M-bit Partial : Wafer/Chip Copyright©2006 FUJITSU LIMITED All rights reserved MB82DP02183D-65L
● PRODUCT LINEUP Parameter Access Time (Max) (tCE, tAA) Active Current (Max) (IDDA1) Standby Current (Max) (IDDS1) Power Down Current (Max) (IDDPS) MB82DP02183D-65L 65 ns 30 mA 100 µA 10 µA
● PIN
DESCRIPTION
Pin Name A20 to A0 CE1 CE2 WE OE LB UB DQ7 to DQ0 DQ15 to DQ8 VDD VSS Address Input Chip Enable 1 (Low Active) Chip Enable 2 (High Active) Write Enable (Low Active) Output Enable (Low...
