Fujitsu MB82DP04183C
MB82DP04183C is a CMOS Fast Cycle Random Access Memory (FCRAM*) with asynchronous Static Random Access Memory (SRAM) interface containing 67,108,864 storages accessible in a 16-bit format. MB82DP04183C is utilized using a FUJITSU advanced FCRAM core technology and improved integration in comparison to regular SRAM. This MB82DP04183C is suited for mobile applications such as Cellular Handset and PDA.| Part No. | MB82DP04183C |
|---|---|
| Datasheet | MB82DP04183C Download |
| Manufacturer |  Fujitsu |
| Description | 64M Bit (4 M word X 16 bit) Mobile Phone Application Specific Memory |
| Buy | Stock & Price |
DESCRIPTION
The FUJITSU *: FCRAM is a trademark of Fujitsu Limited, Japan.● PRODUCT LINEUP Parameter Access time (Max) (tCE, tAA) Active current (Max) (IDDA1) Standby current (Max) (IDDS1) Power down current (Max) (IDDPS) MB82DP04183C-65L 65 ns 40 mA 90 µA 10 µA
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FEATURES
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● Asynchronous SRAM Interface Fast Access Cycle Time : tAA = tCE = 65 ns Max 8 words Page Access Capability : tPAA = 20 ns Max Low Voltage Operating Condition : VDD = +2.6 V to +3.1 V Wide Operating Temperature : TA = -30 °C to +85 °C Byte Control by LB and UB Low Power Consumption : IDDA1 = 40 mA Max IDDS1 = 90 µA Max ( TA = +40 °C)
● Various Power Down mode : Sleep 8M-bit Partial 16M-bit Partial
● Shipping Form : Wafer/Chip Copyright©2005-2006 FUJITSU LIMITED All rights reserved MB82DP04183C-65L
● PIN
DESCRIPTION
Pin Name A21 to A0 CE1 CE2 WE OE LB UB DQ8 to DQ1 DQ16 to DQ9 VDD VSS Address Input Chip Enable 1 (Low Active) Chip Enable 2 (High Active) Write Enable (Low Active) Output Enable (Low Active)...
