Fujitsu MB8417-X
MB84171MB8417-X is a 2048 word by 8-bit static random access memory fabricated with high density, high reliability Complementary MOS silicon-gate technology_ The memory utilizes asynchronous circuitry and may be maintained in any state for an indefinite period of time. It is possible to retain data at low power supply voltage. The MB8417/MB8417-X can be optimized for high performance applications such as microcomputer systems where fast access time and ease of use are required.| Part No. | MB8417-X |
|---|---|
| Datasheet | MB8417-X Download |
| Manufacturer |  Fujitsu |
| Description | CMOS STATIC RANDOM ACCESS MEMORY |
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ABSOLUTE MAXIMUM RATINGS
are exceeded. Functional operation should be restricted to the conditions as detailed in the operational sections of this data sheet. This device contains circuitry to protect the inputs against damage due to high static voltages or electric fields. However, it is advised that normal precautions be taken to avoid applications of any voltage higher than maximum rated voltages to this high impedance circuit. RECOMMENDED OPERATING CONDmONS, Vss = GND Parameter Ambient Temperature Supply Voltage Input High Voltage Input Low Voltage Symbol TA Vee VIH VIL Min 0 4.5 2.2 -0.3 MB8417 Typ Max - +70 5.0 5.5 - Vee + 0.3 - 0.8 Min -40 4.5 2.2 -0.3 CAPACITANCE (TA = 25●C,f=1 MHz) Parameter Symbol Min Max Input Capacitance CIN - 7 Input / Output Capacitance CliO - 10 MB8417●X Typ Max Unit - +85●C 5.0 5.5 V - Vee +0.3 V - 0.8 V Unit Condition pF VIN =OV pF VI/O = ov STATIC CHARACTERISTICS (Recommended operating conditions unless otherwise noted.) Parameter Condition Standby S...
