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MB8418A-15 - CMOS STATIC RANDOM ACCESS MEMORY

Download the MB8418A-15 datasheet PDF. This datasheet also covers the MB8418A-12 variant, as both devices belong to the same cmos static random access memory family and are provided as variant models within a single manufacturer datasheet.

General Description

The Fujitsu MB8418A is a 2048 word by B-bit static random access memory fabricated with high density, high reliability Complementary MOS silicongate technology.

The memory utilizes asynchronous circuitry and may be maintained in any state for an indefinite period of time.

Key Features

  • Organized as 2048 words by 8-bits.
  • Address Access Time: MB8418A-12 120ns Max_ MB8418A-15 150ns Max.
  • Low Power Dissipation: Icc (Active) = 60mA Max. ISB (Standby) = 4mA Max. lOR (Data Retention) = 2mA Min.
  • Completely static operation, no clocks required.
  • Single +5V Power Supply, %10% tolerance retain data at low power supply voltage. The MB8418A can be optimized for high performance.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (MB8418A-12-Fujitsu.pdf) that lists specifications for multiple related part numbers.

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
FUJITSU MICROELECTRONICS CMOS 16,384-BIT STATIC RANDOM ACCESS MDAORY MB8418A-12 MB8418A-15 DESCRIPTION The Fujitsu MB8418A is a 2048 word by B-bit static random access memory fabricated with high density, high reliability Complementary MOS silicongate technology. The memory utilizes asynchronous circuitry and may be maintained in any state for an indefinite period of time. All input and output pins are TTL-compatible, and a single 5 volt power supply is used. It is possible to FEATURES • Organized as 2048 words by 8-bits • Address Access Time: MB8418A-12 120ns Max_ MB8418A-15 150ns Max. • Low Power Dissipation: Icc (Active) = 60mA Max. ISB (Standby) = 4mA Max. lOR (Data Retention) = 2mA Min.