Fujitsu MB84VA2106
16M (x16) FLASH MEMORY & 1M (x 8) STATIC RAM
| Part No. | MB84VA2106 |
|---|---|
| Datasheet | MB84VA2106 Download |
| Manufacturer |  Fujitsu |
| Description | 16M (x16) FLASH MEMORY & 1M (x 8) STATIC RAM |
| Buy | Stock & Price |
FEATURES
● Power supply voltage of 2.7 to 3.6 V● High performance 100 ns maximum access time
● Operating Temperature –20 to +85°C — FLASH MEMORY
● Minimum 100,000 write/erase cycles
● Sector erase architecture One 8 K word, two 4 K words, one 16 K word, and thirty one 32 K words. Any combination of sectors can be concurrently erased. Also supports full chip erase.
● Boot Code Sector Architecture MB84VA2106: Top sector MB84VA2107: Bottom sector
● Embedded EraseTM Algorithms Automatically pre-programs and erases the chip or any sector
● Embedded ProgramTM Algorithms Automatically writes and verifies data at specified address
● Data Polling and Toggle Bit feature for detection of program or erase cycle completion
● Ready-Busy output (RY/BY) Hardware method for detection of program or erase cycle completion
● Automatic sleep mode When addresses remain stable, automatically switch themselves to low power mode.
● Low VCC write inhibit ≤ 2.5 V
● Erase Suspend/Resume Suspends the erase operat...
