Fujitsu MB84VB2001
8M (x 8/x 16) FLASH MEMORY & 8M (x 8/x 16) FLASH MEMORY
| Part No. | MB84VB2001 |
|---|---|
| Datasheet | MB84VB2001 Download |
| Manufacturer |  Fujitsu |
| Description | 8M (x 8/x 16) FLASH MEMORY & 8M (x 8/x 16) FLASH MEMORY |
| Buy | Stock & Price |
FEATURES
● Contain 2 chips of MBM29LV800A, and each chip have separate CE.● Power supply voltage of 2.7 to 3.6 V
● High performance 100 ns maximum access time
● Operating Temperature –40 to +85°C
● Minimum 100,000 write/erase cycles
● Sector erase architecture One 16 K byte, two 8 K bytes, one 32 K byte, and fifteen 64 K bytes × 2 chips Any combination of sectors can be concurrently erased. Also supports full chip erase.
● Boot Code Sector Architecture MB84VB2000: Top sector MB84VB2001: Bottom sector
● Embedded EraseTM Algorithms Automatically pre-programs and erases the chip or any sector
● Embedded ProgramTM Algorithms Automatically writes and verifies data at specified address
● Data Polling and Toggle Bit feature for detection of program or erase cycle completion
● Ready/Busy output (RY/BY) Hardware method for detection of program or erase cycle completion
● Automatic sleep mode When addresses remain stable, automatically switch themselves to low power mode.
● Low VCC write inhibi...
