Fujitsu MB84VD2009
8M (x 16) FLASH MEMORY & 2M (x 16) STATIC RAM
| Part No. | MB84VD2009 |
|---|---|
| Datasheet | MB84VD2009 Download |
| Manufacturer |  Fujitsu |
| Description | 8M (x 16) FLASH MEMORY & 2M (x 16) STATIC RAM |
| Buy | Stock & Price |
FEATURES
● Power supply voltage of 2.7 to 3.6 V● High performance 100 ns maximum access time
● Operating Temperature –20 to +85°C — FLASH MEMORY
● Simultaneous operations Read-while Erase or Read-while-Program
● Minimum 100,000 write/erase cycles
● Sector erase architecture Two 16 K byte, four 8 K bytes, two 32 K byte, and fourteen 64 K bytes. Any combination of sectors can be concurrently erased. Also supports full chip erase.
● Boot Code Sector Architecture MB84VD2008: Top sector MB84VD2009: Bottom sector
● Embedded EraseTM Algorithms Automatically pre-programs and erases the chip or any sector
● Embedded ProgramTM Algorithms Automatically writes and verifies data at specified address
● Data Polling and Toggle Bit feature for detection of program or erase cycle completion
● Ready-Busy output (RY/BY) Hardware method for detection of program or erase cycle completion
● Automatic sleep mode When addresses remain stable, automatically switch themselves to low power mode.
● Low VCC write...
