Fujitsu MB84VD2209xEA
32M (X 8/X16) FLASH MEMORY & 2M (X 8/X16) STATIC RAM
| Part No. | MB84VD2209xEA |
|---|---|
| Datasheet | MB84VD2209xEA Download |
| Manufacturer |  Fujitsu |
| Description | 32M (X 8/X16) FLASH MEMORY & 2M (X 8/X16) STATIC RAM |
| Buy | Stock & Price |
FEATURES
● Power supply voltage of 2.7 to 3.3V● High performance 90 ns maximum access time (Flash) 85 ns maximum access time (SRAM)
● Operating Temperature –25 to +85°C
● Package 73-ball FBGA (Continued) s PRODUCT LINE UP Flash Memory Ordering Part No. VCCf, VCCs = 3.0 V +0.3 V –0.3 V SRAM MB84VD2208XEA-90/MB84VD2209XEA-90 90 90 40 85 85 45 Max. Address Access Time (ns) Max. CE Access Time (ns) Max. OE Access Time (ns) s PACKAGE 73-ball plastic FBGA ( BGA-73P-M01) MB84VD2208XEA-90/MB84VD2209XEA-90 (Continued) 1. FLASH MEMORY
● Simultaneous Read/Write operations (dual bank) Multiple devices available with different bank sizes Host system can program or erase in one bank, then immediately and simultaneously read from the other bank Zero latency between read and write operations Read-while-erase Read-while-program
● Minimum 100,000 write/erase cycles
● Sector erase architecture Eight 4 K words and sixty three 32 K words. Any combination of sectors can be concurrently erased. Also supports full chip erase.
