Fujitsu MB84VD23381FJ
Stacked MCP (Multi-Chip Package) FLASH MEMORY & FCRAM
| Part No. | MB84VD23381FJ |
|---|---|
| Datasheet | MB84VD23381FJ Download |
| Manufacturer |  Fujitsu |
| Description | Stacked MCP (Multi-Chip Package) FLASH MEMORY & FCRAM |
| Buy | Stock & Price |
FEATURES
● Power Supply Voltage of 2.7 V to 3.1 V● High Performance 70 ns maximum access time (Flash) 80 ns maximum access time (FCRAM)
● Operating Temperature −30 °C to +85 °C
● Package 65-ball FBGA (Continued) s PRODUCT LINEUP Flash Memory Power Supply Voltage ( V ) Max Address Access Time (ns) Max CE Access Time (ns) Max OE Access Time (ns) VCCf* = 2.7 V to 3.1 V 70 70 30 FCRAM VCCr* = 2.7 V to 3.1 V 80 80 40 *: Both VCCf and VCCr must be the same level when either part is being accessed. s PACKAGE 65-ball plastic FBGA (BGA-65P-M01) MB84VD23381FJ-80 (Continued) 1. FLASH MEMORY
● 0.17 µm Process Technology
● Simultaneous Read/Write Operations (Dual Bank)
● FlexBankTM*1 Bank A : 8 Mbit (8 KB × 8 and 64 KB × 15) Bank B : 24 Mbit (64 KB × 48) Bank C : 24 Mbit (64 KB × 48) Bank D : 8 Mbit (8 KB × 8 and 64 KB × 15) Two virtual Banks are chosen from the combination of four physical banks Host system can program or erase in one bank, and then read immediately and simultaneously from the other bank with zero latency between read and write operations.
