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MB85R1002A Datasheet 1 M Bit (64 K X 16)

Manufacturer: Fujitsu Semiconductor Limited

Overview: FUJITSU SEMICONDUCTOR DATA SHEET DS501-00004-0v01-E Memory FRAM CMOS 1 M Bit (64 K × 16).

General Description

S The MB85R1002A is an FRAM (Ferroelectric Random Access Memory) chip consisting of 65,536 words × 16 bits of nonvolatile memory cells created using ferroelectric process and silicon gate CMOS process technologies.

The MB85R1002A is able to retain data without using a back-up battery, as is needed for SRAM.

The memory cells used in the MB85R1002A can be used for 1010 read/write operations, which is a significant improvement over the number of read and write operations supported by Flash memory and E2PROM.

Key Features

  • Bit configuration Read/write endurance Operating power supply voltage Operating temperature range Data retention LB and UB data byte control Package : 65,536 words × 16 bits : 1010 times : 3.0 V to 3.6 V :.
  • 40 °C to + 85 °C : 10 years ( + 55 °C) : 48-pin plastic TSOP (1) Copyright©2011.

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