Description
The MB85R1002A is an FRAM (Ferroelectric Random Access Memory) chip consisting of 65,536 words × 16 bits of nonvolatile memory cells created using ferroelectric process and silicon gate CMOS process technologies.
Features
- Bit configuration Read/write endurance Operating power supply voltage Operating temperature range Data retention LB and UB data byte control Package : 65,536 words × 16 bits : 1010 times : 3.0 V to 3.6 V :.
- 40 °C to + 85 °C : 10 years ( + 55 °C) : 48-pin plastic TSOP (1)
Copyright©2011.
MB85R1002A Datasheet
