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MB85RC04V Datasheet 4k-bit I2c Memory Fram

Manufacturer: Fujitsu Semiconductor Limited

Overview: FUJITSU SEMICONDUCTOR DATA SHEET Memory FRAM 4 K (512 × 8) Bit I2C MB85RC04V DS501-00016-2v0-E.

General Description

The MB85RC04V is an FRAM (Ferroelectric Random Access Memory) chip in a configuration of 512 words × 8 bits, using the ferroelectric process and silicon gate CMOS process technologies for forming the nonvolatile memory cells.

Unlike SRAM, the MB85RC04V is able to retain data without using a data backup battery.

The read/write endurance of the nonvolatile memory cells used for the MB85RC04V has improved to be at least 1012 cycles, significantly outperforming other nonvolatile memory products in the number.

Key Features

  • Bit configuration : 512 words × 8 bits.
  • Two-wire serial interface : Fully controllable by two ports: serial clock (SCL) and serial data (SDA).
  • Operating frequency : 1 MHz (Max).
  • Read/write endurance : 1012 times / byte.

More Datasheets from Fujitsu Semiconductor Limited

Part Number Description
MB85RC128 128 K (16 K x 8) Bit I2C
MB85RC16 16 K (2 K x 8) Bit I2C
MB85RC16V 16K (2K x 8) Bit I2C
MB85RC256V 256K (32K x 8)Bit I2C
MB85RC64 64K-Bit I2C Memory FRAM
MB85RC64A 64K-Bit I2C Memory FRAM
MB85RC64TA 64K-Bit I2C Memory FRAM
MB85RC64V 64K-Bit I2C Memory FRAM
MB85R1001A 1 M Bit (128 K x 8)
MB85R1002A 1 M Bit (64 K x 16)

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