MB85RC16V Datasheet | Fujitsu Semiconductor Limited

FUJITSU SEMICONDUCTOR DATA SHEET Memory FRAM DS501-00010-6v0-E 16 K (2 K × 8) Bit I2C - DESCRIPTION The MB85RC16V is an FRAM (Ferroelectric Random Access Memory) chip in a configuration of 2,048 words × 8 bits, using the ferroelectric process and silicon gate CMOS process technologies for forming the nonvolatile memory cells. Unlike SRAM, the MB85RC16V is able to retain data without using a data backup battery. The memory cells used in the MB85RC16V have at least 1012 Read/Write operation endurance per byte, which is a significant improvement over the number of read and write operations supported by other nonvolatile memory products. The MB85RC16V can provide writing in one...