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MB85RS128B Datasheet PDF

Fujitsu MB85RS128B

MB85RS128B is a FRAM (Ferroelectric Random Access Memory) chip in a configuration of 16,384 words × 8 bits, using the ferroelectric process and silicon gate CMOS process technologies for forming the nonvolatile memory cells. The MB85RS128B is able to retain data without using a back-up battery, as is needed for SRAM. The memory cells used in the MB85RS128B can be used for 1012 read/write operations, which is a significant improvement over the number of read and write operations supported by Flash memory and E2PROM.
Part No. MB85RS128B
Datasheet MB85RS128B Download
Manufacturer
Fujitsu
Description 128K (16K x 8) Bit SPI
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MB85RS128B datasheet page 1 preview

DESCRIPTION

MB85RS128B adopts the Serial Peripheral Interface (SPI). MB85RS128B does not take long time to write data like Flash memories or E2PROM, and MB85RS128B takes no wait time.
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FEATURES

● Bit configuration : 16,384 words × 8 bits
● Serial Peripheral Interface : SPI (Serial Peripheral Interface) Correspondent to SPI mode 0 (0, 0) and mode 3 (1, 1)
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