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MBM2148-55L - MOS STATIC RANDOM ACCESS MEMORY

Key Features

  • Organization: 1024 words x 4 bits.
  • Static operation; no clock or timing strobe required.
  • Fast access time: MBM2148-55L: 55 ns max. MBM2148.
  • 70L: 70 ns max.
  • Low power consumption: Icc = 125mA max. IS8 = 20mA max.
  • Single +5V DC supply voltage (±10% tolerance).
  • Common data input/output.
  • TIL compatible inputs/outputs.
  • Three.
  • state output with OR.
  • tie capability.
  • Chip select for simplified memory expansion,.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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FUJITSU MICROELECTRONICS MOS 4096·BIT STATIC RANDOM ACCESS lVIEl.(ORY MBM2148·55L MBM2148·70L DfSCRIPTION The Fujitsu MBM2148L is a 1024 word by 4 bit static random access memory with automatic power down. It is fabricated us· ing N·channel silicon gate MOS technology. The memory is fully static and requires no clock or timing strobe. All pins are TIL compatible and a single 5V power supply is required. A separate chip select (CS) pin simplifies multipackage systems design. It permits the selection of an individual package when outputs are OR·tied, and furthermore ·on selecting a single package by CS the other deselected packages automatically power down. Fujitsu's MBM2148L offers the advantages of low power dissipation, low cost and high performance.