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MBM29DL161BD-90 Datasheet Flash Memory CMOS 16m (2m X 8/1m X 16) Bit

Manufacturer: Fujitsu Semiconductor Limited

Overview: .. FUJITSU SEMICONDUCTOR DATA SHEET DS05-20874-7E FLASH MEMORY CMOS 16M (2M × 8/1M × 16) BIT Dual Operation MBM29DL16XTD/BD -70/90.

This datasheet includes multiple variants, all published together in a single manufacturer document.

General Description

) Host system can program or erase in one bank, then immediately and simultaneously read from the other bank Zero latency between read and write operations Read-while-erase Read-while-program • Single 3.0 V read, program, and erase Minimizes system level power requirements s PRODUCT LINE UP (Continued) Part No.

Ordering Part No.

VCC = 3.3 V +0.3 V –0.3 V VCC = 3.0 V +0.6 V –0.3 V Max Address Access Time (ns) Max CE Access Time (ns) Max OE Access Time (ns) MBM29DL16XTD/MBM29DL16XBD 70 — — 90 70 90 70 90 30 35 s PACKAGES 48-pin plastic TSOP (1) Marking Side 48-pin plastic TS

Key Features

  • 0.33 µm Process Technology.
  • Simultaneous Read/Write operations (dual bank) Multiple devices available with different bank sizes (Refer to “MBM29DL16XTD/BD Device Bank Divisions Table” in sGENERAL.

More Datasheets from Fujitsu Semiconductor Limited

Part Number Description
MBM29DL161BD-70 FLASH MEMORY CMOS 16M (2M x 8/1M x 16) BIT
MBM29DL161BE-12 16M (2M x 8/1M x 16) BIT Dual Operation
MBM29DL161BE-70 16M (2M x 8/1M x 16) BIT Dual Operation
MBM29DL161BE-90 16M (2M x 8/1M x 16) BIT Dual Operation
MBM29DL161TD-70 FLASH MEMORY CMOS 16M (2M x 8/1M x 16) BIT
MBM29DL161TD-90 FLASH MEMORY CMOS 16M (2M x 8/1M x 16) BIT
MBM29DL161TE-12 16M (2M x 8/1M x 16) BIT Dual Operation
MBM29DL161TE-70 16M (2M x 8/1M x 16) BIT Dual Operation
MBM29DL161TE-90 16M (2M x 8/1M x 16) BIT Dual Operation
MBM29DL162BD-70 CMOS FLASH MEMORY

MBM29DL161BD-90 Distributor