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MBM29DL161TE-70 Datasheet 16m (2m X 8/1m X 16) Bit Dual Operation

Manufacturer: Fujitsu Semiconductor Limited

Overview: .. FUJITSU SEMICONDUCTOR DATA SHEET DS05-20880-1E FLASH MEMORY CMOS 16M (2M × 8/1M × 16) BIT Dual Operation MBM29DL16XTE/BE -70/90/12.

This datasheet includes multiple variants, all published together in a single manufacturer document.

Key Features

  • 0.23 µm Process Technology.
  • Simultaneous Read/Write operations (dual bank) Multiple devices available with different bank sizes (Refer to Table 1) Host system can program or erase in one bank, then immediately and simultaneously read from the other bank Zero latency between read and write operations Read-while-erase Read-while-program.
  • Single 3.0 V read, program, and erase Minimizes system level power requirements s.

More Datasheets from Fujitsu Semiconductor Limited

Part Number Description
MBM29DL161TE-12 16M (2M x 8/1M x 16) BIT Dual Operation
MBM29DL161TE-90 16M (2M x 8/1M x 16) BIT Dual Operation
MBM29DL161TD-70 FLASH MEMORY CMOS 16M (2M x 8/1M x 16) BIT
MBM29DL161TD-90 FLASH MEMORY CMOS 16M (2M x 8/1M x 16) BIT
MBM29DL161BD-70 FLASH MEMORY CMOS 16M (2M x 8/1M x 16) BIT
MBM29DL161BD-90 FLASH MEMORY CMOS 16M (2M x 8/1M x 16) BIT
MBM29DL161BE-12 16M (2M x 8/1M x 16) BIT Dual Operation
MBM29DL161BE-70 16M (2M x 8/1M x 16) BIT Dual Operation
MBM29DL161BE-90 16M (2M x 8/1M x 16) BIT Dual Operation
MBM29DL162BD-70 CMOS FLASH MEMORY

MBM29DL161TE-70 Distributor