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MBM29DL322BD-12 - 32M (4M x 8/2M x 16) BIT Dual Operation

This page provides the datasheet information for the MBM29DL322BD-12, a member of the MBM29DL321BD 32M (4M x 8/2M x 16) BIT Dual Operation family.

Features

  • 0.33 µm Process Technology.
  • Simultaneous Read/Write operations (dual bank) Multiple devices available with different bank sizes (Refer to Table 1) Host system can program or erase in one bank, then immediately and simultaneously read from the other bank Zero latency between read and write operations Read-while-erase Read-while-program.
  • Single 3.0 V read, program, and erase Minimizes system level power requirements s.

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Datasheet preview – MBM29DL322BD-12

Datasheet Details

Part number MBM29DL322BD-12
Manufacturer Fujitsu
File Size 1.58 MB
Description 32M (4M x 8/2M x 16) BIT Dual Operation
Datasheet download datasheet MBM29DL322BD-12 Datasheet
Additional preview pages of the MBM29DL322BD-12 datasheet.

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Full PDF Text Transcription

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FUJITSU SEMICONDUCTOR DATA SHEET DS05-20873-4E FLASH MEMORY CMOS 32M (4M × 8/2M × 16) BIT Dual Operation MBM29DL32XTD/BD -80/90/12 s FEATURES • 0.33 µm Process Technology • Simultaneous Read/Write operations (dual bank) Multiple devices available with different bank sizes (Refer to Table 1) Host system can program or erase in one bank, then immediately and simultaneously read from the other bank Zero latency between read and write operations Read-while-erase Read-while-program • Single 3.0 V read, program, and erase Minimizes system level power requirements s PRODUCT LINE UP (Continued) Part No. www.DataSheet4U.com Ordering Part No. VCC = 3.3 V +0.3 V –0.3 V VCC = 3.0 V +0.6 V –0.3 V Max. Address Access Time (ns) Max. CE Access Time (ns) Max.
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