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MBM29DL64DF-70 - FLASH MEMORY CMOS 64M (8 M x 8/4 M x 16) BIT

Download the MBM29DL64DF-70 datasheet PDF. This datasheet also covers the MBM29DL64DF variant, as both devices belong to the same flash memory cmos 64m (8 m x 8/4 m x 16) bit family and are provided as variant models within a single manufacturer datasheet.

General Description

MBM29DL64DF is a 64 M-bit, 3.0 V-only Flash memory organized as 8 Mbytes of 8 bits each or 4 M words of 16 bits each.

The device comes in 48-pin TSOP (1) and 48-ball FBGA packages.

This device is designed to be programmed in system with 3.0 V VCC supply.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (MBM29DL64DF_FujitsuMediaDevices.pdf) that lists specifications for multiple related part numbers.

📁 Similar Datasheet

Part Number Description Manufacturer
MBM29DL64DF FLASH MEMORY CMOS 64M (8 M x 8/4 M x 16) BIT Fujitsu Media Devices
MBM29DL640E 64 M (8 M X 8/4 M X 16) BIT Dual Operation Fujitsu Media Devices
MBM29DL161BD (MBM29DL16xTD/BD) FLASH MEMORY CMOS 16M (2M X 8/1M X 16) BIT Fujitsu Media Devices
MBM29DL161BE (MBM29DL16xTE/BE) 16M (2MX8/1MX16) BIT Dual Operation Fujitsu Media Devices
MBM29DL161TD (MBM29DL16xTD/BD) FLASH MEMORY CMOS 16M (2M X 8/1M X 16) BIT Fujitsu Media Devices

Other Datasheets by Fujitsu Semiconductor Limited

Part Number Description
MBM29DL161BD-70 FLASH MEMORY CMOS 16M (2M x 8/1M x 16) BIT
MBM29DL161BD-90 FLASH MEMORY CMOS 16M (2M x 8/1M x 16) BIT
MBM29DL161BE-12 16M (2M x 8/1M x 16) BIT Dual Operation
MBM29DL161BE-70 16M (2M x 8/1M x 16) BIT Dual Operation
MBM29DL161BE-90 16M (2M x 8/1M x 16) BIT Dual Operation

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
FUJITSU SEMICONDUCTOR DATA SHEET DS05-20905-1E FLASH MEMORY CMOS 64 M (8 M × 8/4 M × 16) BIT Dual Operation MBM29DL64DF-70 s DESCRIPTION MBM29DL64DF is a 64 M-bit, 3.0 V-only Flash memory organized as 8 Mbytes of 8 bits each or 4 M words of 16 bits each. The device comes in 48-pin TSOP (1) and 48-ball FBGA packages. This device is designed to be programmed in system with 3.0 V VCC supply. 12.0 V VPP and 5.0 V VCC are not required for write or erase operations. The device can also be reprogrammed in standard EPROM programmers. The device is organized into four physical banks : Bank A, Bank B, Bank C and Bank D, which are considered to be four separate memory arrays operations.