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MBM29DL64DF-70 - FLASH MEMORY CMOS 64M (8 M x 8/4 M x 16) BIT

This page provides the datasheet information for the MBM29DL64DF-70, a member of the MBM29DL64DF FLASH MEMORY CMOS 64M (8 M x 8/4 M x 16) BIT family.

Datasheet Summary

Description

MBM29DL64DF is a 64 M-bit, 3.0 V-only Flash memory organized as 8 Mbytes of 8 bits each or 4 M words of 16 bits each.

The device comes in 48-pin TSOP (1) and 48-ball FBGA packages.

This device is designed to be programmed in system with 3.0 V VCC supply.

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Datasheet preview – MBM29DL64DF-70

Datasheet Details

Part number MBM29DL64DF-70
Manufacturer Fujitsu
File Size 854.54 KB
Description FLASH MEMORY CMOS 64M (8 M x 8/4 M x 16) BIT
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FUJITSU SEMICONDUCTOR DATA SHEET DS05-20905-1E FLASH MEMORY CMOS 64 M (8 M × 8/4 M × 16) BIT Dual Operation MBM29DL64DF-70 s DESCRIPTION MBM29DL64DF is a 64 M-bit, 3.0 V-only Flash memory organized as 8 Mbytes of 8 bits each or 4 M words of 16 bits each. The device comes in 48-pin TSOP (1) and 48-ball FBGA packages. This device is designed to be programmed in system with 3.0 V VCC supply. 12.0 V VPP and 5.0 V VCC are not required for write or erase operations. The device can also be reprogrammed in standard EPROM programmers. The device is organized into four physical banks : Bank A, Bank B, Bank C and Bank D, which are considered to be four separate memory arrays operations.
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