DESCRIPTION
12.0 V VPP and 5.0 V VCC are not required for write or erase operations. The device can also be reprogrammed in standard EPROM programmers. (Continued) s PRODUCT LINE UP Part No. Power Supply Voltage (V) Max Address Access Time (ns) Max CE Access Time (ns) Max OE Access Time (ns) MBM29DS163TE/BE10 0.2 V VCC = 2.0 V + −0.2 V 100 100 35 s PACKAGES 48-pin plastic TSOP (1) Marking Side 48-pin plastic TSOP (1) 48-ball plastic FBGA (FPT-48P-M19) Marking Side (FPT-48P-M20) (BGA-48P-M11) MBM29DS163TE/BE10 (Continued) The device is organized into two banks, Bank 1 and Bank 2, which can be considered to be two separate memory arrays as far as certain operations are concerned. This device is the same as Fujitsu’s standard 1.8 V only Flash memories with the additional capability of allowing a normal non-delayed read access from a non-busy bank of the array while an embedded write (either a program or an erase) operation is simultaneously taking place on the other bank. The standard device offers access time 100 ns, allowing operation of high-speed microprocessors without wait state.
Fujitsu
