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MBM29F016A-70 - 16M (2M x 8) BIT FLASH MEMORY

This page provides the datasheet information for the MBM29F016A-70, a member of the MBM29F016A 16M (2M x 8) BIT FLASH MEMORY family.

Datasheet Summary

Features

  • Single 5.0 V read, write, and erase Minimizes system level power requirements.
  • Compatible with JEDEC-standard commands Pinout and software compatible with single-power supply Flash Superior inadvertent write protection.
  • 48-pin TSOP(I) (Package Suffix: PFTN-Normal Bend Type, PFTR-Reverse Bend Type).
  • Minimum 100,000 write/erase cycles.
  • High performance 70 ns maximum access time.
  • Sector erase architecture Uniform sectors of 64 K bytes each Any.

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Datasheet preview – MBM29F016A-70

Datasheet Details

Part number MBM29F016A-70
Manufacturer Fujitsu
File Size 458.13 KB
Description 16M (2M x 8) BIT FLASH MEMORY
Datasheet download datasheet MBM29F016A-70 Datasheet
Additional preview pages of the MBM29F016A-70 datasheet.

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Full PDF Text Transcription

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FUJITSU SEMICONDUCTOR DATA SHEET FLASH MEMORY CMOS 16M (2M × 8) BIT DS05-20844-4E MBM29F016A-70/-90/-12 s FEATURES • Single 5.0 V read, write, and erase Minimizes system level power requirements • Compatible with JEDEC-standard commands Pinout and software compatible with single-power supply Flash Superior inadvertent write protection • 48-pin TSOP(I) (Package Suffix: PFTN-Normal Bend Type, PFTR-Reverse Bend Type) • Minimum 100,000 write/erase cycles • High performance 70 ns maximum access time • Sector erase architecture Uniform sectors of 64 K bytes each Any combination of sectors can be erased. Also supports full chip erase.
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